Infineon IMZC120 SiC N-Channel MOSFET, 80 A, 1200 V, 4-Pin PG-TO247-4-U07 IMZC120R022M2HXKSA1
- RS Stock No.:
- 351-925
- Mfr. Part No.:
- IMZC120R022M2HXKSA1
- Brand:
- Infineon
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Subtotal (1 unit)*
£18.20
(exc. VAT)
£21.84
(inc. VAT)
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In Stock
- 240 unit(s) ready to ship
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Units | Per unit |
|---|---|
| 1 - 9 | £18.20 |
| 10 - 99 | £16.38 |
| 100 + | £15.11 |
*price indicative
- RS Stock No.:
- 351-925
- Mfr. Part No.:
- IMZC120R022M2HXKSA1
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 80 A | |
| Maximum Drain Source Voltage | 1200 V | |
| Package Type | PG-TO247-4-U07 | |
| Series | IMZC120 | |
| Mounting Type | Through Hole | |
| Pin Count | 4 | |
| Channel Mode | Enhancement | |
| Number of Elements per Chip | 1 | |
| Transistor Material | SiC | |
Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type N | ||
Maximum Continuous Drain Current 80 A | ||
Maximum Drain Source Voltage 1200 V | ||
Package Type PG-TO247-4-U07 | ||
Series IMZC120 | ||
Mounting Type Through Hole | ||
Pin Count 4 | ||
Channel Mode Enhancement | ||
Number of Elements per Chip 1 | ||
Transistor Material SiC | ||
The Infineon CoolSiC MOSFET discrete 1200 V, 22 mΩ G2 in a TO-247 4pin with high creepage package builds on the strengths of Generation 1 technology with significant improvement that provides an advanced solution for more cost-optimized, efficient, compact, easy-to-design and reliable system. It enhanced better performance in both hard-switching operation and soft-switching topologies for all common combinations of AC-DC, DC-DC, and DC-AC stages.
Short circuit withstand time 2 μs
Benchmark gate threshold voltage 4.2 V
Robust against parasitic turn on
Very low switching losses
Tighter VGS(th) parameter distribution
Benchmark gate threshold voltage 4.2 V
Robust against parasitic turn on
Very low switching losses
Tighter VGS(th) parameter distribution
