Infineon IGLR65 GaN N-Channel MOSFET Transistor, 9.2 A, 650 V, 8-Pin PG-TSON-8 IGLR65R200D2XUMA1
- RS Stock No.:
- 351-877
- Mfr. Part No.:
- IGLR65R200D2XUMA1
- Brand:
- Infineon
Bulk discount available
Subtotal (1 pack of 5 units)*
£8.94
(exc. VAT)
£10.73
(inc. VAT)
FREE delivery for orders over £50.00
Temporarily out of stock
- Shipping from 09 April 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 5 - 45 | £1.788 | £8.94 |
| 50 - 95 | £1.698 | £8.49 |
| 100 - 495 | £1.574 | £7.87 |
| 500 - 995 | £1.448 | £7.24 |
| 1000 + | £1.394 | £6.97 |
*price indicative
- RS Stock No.:
- 351-877
- Mfr. Part No.:
- IGLR65R200D2XUMA1
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 9.2 A | |
| Maximum Drain Source Voltage | 650 V | |
| Series | IGLR65 | |
| Package Type | PG-TSON-8 | |
| Mounting Type | Surface Mount | |
| Pin Count | 8 | |
| Channel Mode | Enhancement | |
| Transistor Material | GaN | |
| Number of Elements per Chip | 1 | |
Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type N | ||
Maximum Continuous Drain Current 9.2 A | ||
Maximum Drain Source Voltage 650 V | ||
Series IGLR65 | ||
Package Type PG-TSON-8 | ||
Mounting Type Surface Mount | ||
Pin Count 8 | ||
Channel Mode Enhancement | ||
Transistor Material GaN | ||
Number of Elements per Chip 1 | ||
- COO (Country of Origin):
- MY
The Infineon GaN power transistor allows for increased efficiency at high-frequency operation. As part of the CoolGaN 650 V G5 family, it meets the highest quality standards, enabling highly reliable designs with superior efficiency. Housed in a bottom-side cooled ThinPAK package, it is well-suited for consumer applications with slim form factors.
650 V e-mode power transistor
Ultrafast switching
No reverse-recovery charge
Capable of reverse conduction
Low gate charge, low output charge
Superior commutation ruggedness
Low dynamic RDS(on)
High ESD robustness: 2 kV HBM - 1 kV CDM
Bottom-side cooled package
JEDEC qualified (JESD47, JESD22)
Ultrafast switching
No reverse-recovery charge
Capable of reverse conduction
Low gate charge, low output charge
Superior commutation ruggedness
Low dynamic RDS(on)
High ESD robustness: 2 kV HBM - 1 kV CDM
Bottom-side cooled package
JEDEC qualified (JESD47, JESD22)
