Infineon IMZA65 SiC N-Channel MOSFET, 144 A, 650 V, 4-Pin PG-TO247-4 IMZA65R010M2HXKSA1

Bulk discount available

Subtotal (1 unit)*

£26.90

(exc. VAT)

£32.28

(inc. VAT)

Add to Basket
Select or type quantity
Temporarily out of stock
  • Shipping from 06 April 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units
Per unit
1 - 9£26.90
10 - 99£24.21
100 +£22.33

*price indicative

RS Stock No.:
351-868
Mfr. Part No.:
IMZA65R010M2HXKSA1
Brand:
Infineon
Find similar products by selecting one or more attributes.
Select all

Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

144 A

Maximum Drain Source Voltage

650 V

Package Type

PG-TO247-4

Series

IMZA65

Mounting Type

Through Hole

Pin Count

4

Channel Mode

Enhancement

Transistor Material

SiC

Number of Elements per Chip

1

COO (Country of Origin):
CN
The Infineon CoolSiC MOSFET 650 V, 10 mΩ G2 in a TO-247-4 package builds on the strengths of Generation 1 technology and enables the accelerated system design of more cost optimized, efficient, compact, and reliable solutions. Generation 2 comes with significant improvements in key figures-of-merit for both, hard-switching operation and soft-switching topologies, suitable for all common combinations of AC-DC, DC-DC, and DC-AC stages.

Excellent figures of merit (FOMs)
Best in class RDS(on)
High robustness and overall quality
Flexible driving voltage range
Support for unipolar driving (VGSoff=0)
Best immunity against turn-on effects
Improved package interconnect with .XT
4-pin package