Infineon IPD N-Channel MOSFET, 7 A, 600 V, 3-Pin PG-TO252-3 IPD60R600CM8XTMA1

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£6.17

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£7.40

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10 - 90£0.617£6.17
100 - 240£0.586£5.86
250 - 490£0.543£5.43
500 - 990£0.50£5.00
1000 +£0.481£4.81

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RS Stock No.:
349-313
Mfr. Part No.:
IPD60R600CM8XTMA1
Brand:
Infineon
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Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

7 A

Maximum Drain Source Voltage

600 V

Series

IPD

Package Type

PG-TO252-3

Mounting Type

Surface Mount

Pin Count

3

Channel Mode

Enhancement

Number of Elements per Chip

1

COO (Country of Origin):
MY
The Infineon CoolMOS 8th generation platform is a revolutionary technology for high voltage power MOSFETs, designed according to the super junction principle and pioneered by Infineon Technologies. The 600V CoolMOS CM8 series is the successor to the CoolMOS 7. It combines the benefits of a fast switching SJ MOSFET with excellent ease of use, e.g low ringing tendency, implemented fast body diode for all products with outstanding robustness against hard commutation and excellent ESD capability. Furthermore, extremely low switching and conduction losses of CM8, make switching applications even more efficient.

Suitable for hard and soft switching topologies
Significant reduction of switching and conduction losses
Simplified thermal management thanks to our advanced die attach technique
Suitable for a wide variety of applications and power ranges