Infineon ISZ N-Channel MOSFET, 54 A, 135 V, 8-Pin PG-TDSON-8 ISZ143N13NM6ATMA1
- RS Stock No.:
- 349-155
- Mfr. Part No.:
- ISZ143N13NM6ATMA1
- Brand:
- Infineon
Bulk discount available
Subtotal (1 pack of 5 units)*
£10.45
(exc. VAT)
£12.55
(inc. VAT)
FREE delivery for orders over £50.00
In Stock
- 5,000 unit(s) ready to ship
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 5 - 45 | £2.09 | £10.45 |
| 50 - 95 | £1.986 | £9.93 |
| 100 + | £1.84 | £9.20 |
*price indicative
- RS Stock No.:
- 349-155
- Mfr. Part No.:
- ISZ143N13NM6ATMA1
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 54 A | |
| Maximum Drain Source Voltage | 135 V | |
| Series | ISZ | |
| Package Type | PG-TDSON-8 | |
| Mounting Type | Surface Mount | |
| Pin Count | 8 | |
| Channel Mode | Enhancement | |
| Number of Elements per Chip | 1 | |
Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type N | ||
Maximum Continuous Drain Current 54 A | ||
Maximum Drain Source Voltage 135 V | ||
Series ISZ | ||
Package Type PG-TDSON-8 | ||
Mounting Type Surface Mount | ||
Pin Count 8 | ||
Channel Mode Enhancement | ||
Number of Elements per Chip 1 | ||
- COO (Country of Origin):
- CN
The Infineon OptiMOS 6 power MOSFET 135 V Normal Level in PQFN 3.3x3.3 package. OptiMOS 6 135 V targets high power motor drive applications such as LEVs, e-forklifts, power and gardening tools, but also UPS applications which predominantly use 72 to 84 V batteries. This product effectively bridges the gap between the 120 V and 150 V MOSFETs and provides significant improvements in RDS(on) and cost, helping improve the system efficiency.
System cost reduction
Less paralleling required
Reduced VDS overshoot and switching losses
Higher power density designs
Less paralleling required
Reduced VDS overshoot and switching losses
Higher power density designs
