Infineon IPT N-Channel MOSFET, 331 A, 120 V, 8-Pin PG-HSOF-8 IPTG017N12NM6ATMA1

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£10.14

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£12.16

(inc. VAT)

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  • 1,800 unit(s) ready to ship
  • Plus 999,998,198 unit(s) shipping from 11 March 2026
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2 - 18£5.07£10.14
20 - 198£4.565£9.13
200 +£4.21£8.42

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RS Stock No.:
349-135
Mfr. Part No.:
IPTG017N12NM6ATMA1
Brand:
Infineon
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Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

331 A

Maximum Drain Source Voltage

120 V

Series

IPT

Package Type

PG-HSOF-8

Mounting Type

Surface Mount

Pin Count

8

Channel Mode

Enhancement

Number of Elements per Chip

1

COO (Country of Origin):
MY
The Infineon OptiMOS 6 Power Transistor, 120 V is an N-channel, normal level MOSFET designed for high efficiency power applications. It features very low on-resistance (RDS(on)), ensuring minimal conduction losses for improved performance. With an excellent gate charge x RDS(on) product (FOM), it enables superior switching characteristics. The MOSFET also has very low reverse recovery charge (Qrr), contributing to reduced switching losses. Its high avalanche energy rating ensures robustness under stress, and it operates reliably at a 175°C temperature, making it suitable for demanding and high temperature environments.

Optimized for high frequency switching and synchronous rectification
Pb free lead plating
RoHS compliant
Halogen free according to IEC61249-2-21
MSL 1 classified according to J-STD-020