Infineon IPT N-Channel MOSFET, 87 A, 200 V, 8-Pin PG-HSOF-8 IPT129N20NM6ATMA1
- RS Stock No.:
- 349-132
- Mfr. Part No.:
- IPT129N20NM6ATMA1
- Brand:
- Infineon
Currently unavailable
Sorry, we don't know when this will be back in stock.
- RS Stock No.:
- 349-132
- Mfr. Part No.:
- IPT129N20NM6ATMA1
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 87 A | |
| Maximum Drain Source Voltage | 200 V | |
| Package Type | PG-HSOF-8 | |
| Series | IPT | |
| Mounting Type | Surface Mount | |
| Pin Count | 8 | |
| Channel Mode | Enhancement | |
| Number of Elements per Chip | 1 | |
Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type N | ||
Maximum Continuous Drain Current 87 A | ||
Maximum Drain Source Voltage 200 V | ||
Package Type PG-HSOF-8 | ||
Series IPT | ||
Mounting Type Surface Mount | ||
Pin Count 8 | ||
Channel Mode Enhancement | ||
Number of Elements per Chip 1 | ||
- COO (Country of Origin):
- MY
The Infineon OptiMOS 6 Power Transistor, 200 V is an N-channel, normal level MOSFET designed for high efficiency power applications. It features very low on-resistance (RDS(on)), minimizing conduction losses. The excellent gate charge x RDS(on) product (FOM) ensures superior switching performance, while the very low reverse recovery charge (Qrr) contributes to efficient operation. With a high avalanche energy rating, it offers enhanced robustness, and it is capable of operating at 175°C, making it reliable even in harsh environments.
Pb free lead plating
RoHS compliant
Halogen free according to IEC61249-2-21
MSL 1 classified according to J-STD-020
RoHS compliant
Halogen free according to IEC61249-2-21
MSL 1 classified according to J-STD-020
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