Infineon IMW SiC N-Channel MOSFET, 5.4 A, 1700 V, 4-Pin PG-TO247-3 IMWH170R1K0M1XKSA1
- RS Stock No.:
- 349-108
- Mfr. Part No.:
- IMWH170R1K0M1XKSA1
- Brand:
- Infineon
Bulk discount available
Subtotal (1 pack of 2 units)*
£9.29
(exc. VAT)
£11.148
(inc. VAT)
FREE delivery for orders over £50.00
Temporarily out of stock
- Shipping from 12 March 2026
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Units | Per unit | Per Pack* |
|---|---|---|
| 2 - 18 | £4.645 | £9.29 |
| 20 - 198 | £4.18 | £8.36 |
| 200 - 998 | £3.855 | £7.71 |
| 1000 - 1998 | £3.58 | £7.16 |
| 2000 + | £3.205 | £6.41 |
*price indicative
- RS Stock No.:
- 349-108
- Mfr. Part No.:
- IMWH170R1K0M1XKSA1
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 5.4 A | |
| Maximum Drain Source Voltage | 1700 V | |
| Series | IMW | |
| Package Type | PG-TO247-3 | |
| Mounting Type | Through Hole | |
| Pin Count | 4 | |
| Channel Mode | Enhancement | |
| Number of Elements per Chip | 1 | |
| Transistor Material | SiC | |
Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type N | ||
Maximum Continuous Drain Current 5.4 A | ||
Maximum Drain Source Voltage 1700 V | ||
Series IMW | ||
Package Type PG-TO247-3 | ||
Mounting Type Through Hole | ||
Pin Count 4 | ||
Channel Mode Enhancement | ||
Number of Elements per Chip 1 | ||
Transistor Material SiC | ||
- COO (Country of Origin):
- CN
The Infineon CoolSiC 1700 V SiC Trench MOSFET is a high performance silicon carbide MOSFET designed for efficient power switching. It is 12 V / 0 V gate-source voltage compatible, making it suitable for use with most flyback controllers. Featuring a benchmark gate threshold voltage (VGS(th)) of 4.5 V, it ensures reliable and efficient switching performance in a wide range of power applications. This MOSFET is an excellent choice for systems requiring high voltage operation and enhanced energy efficiency.
Very low switching losses
Fully controllable dv/dt for EMI optimization
The .XT interconnection technology for best in class thermal performance
Fully controllable dv/dt for EMI optimization
The .XT interconnection technology for best in class thermal performance
