Infineon IMT SiC N-Channel MOSFET, 26 A, 650 V, 8-Pin PG-HSOF-8 IMT65R107M1HXUMA1

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Subtotal (1 pack of 2 units)*

£10.69

(exc. VAT)

£12.828

(inc. VAT)

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Per Pack*
2 - 18£5.345£10.69
20 - 198£4.81£9.62
200 +£4.44£8.88

*price indicative

RS Stock No.:
349-054
Mfr. Part No.:
IMT65R107M1HXUMA1
Brand:
Infineon
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Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

26 A

Maximum Drain Source Voltage

650 V

Series

IMT

Package Type

PG-HSOF-8

Mounting Type

Surface Mount

Pin Count

8

Channel Mode

Enhancement

Number of Elements per Chip

1

Transistor Material

SiC

COO (Country of Origin):
MY
The Infineon CoolSiC MOSFET 650 V G1 is built on over 20 years of solid silicon carbide technology developed by Infineon. By leveraging the unique characteristics of wide bandgap SiC materials, the 650 V CoolSiC MOSFET delivers an exceptional combination of performance, reliability, and ease of use. It is designed for high temperature and harsh operating conditions, making it ideal for demanding applications. This MOSFET enables the simplified and cost-effective deployment of systems with the highest efficiency, addressing the increasing needs of modern power electronics.

Optimized switching behaviour at higher currents
Commutation robust fast body diode with low Qfr
Increased avalanche capability
Compatible with standard drivers
Kelvin source provides up to 4 times lower switching losses