Infineon IMT SiC N-Channel MOSFET, 26 A, 650 V, 8-Pin PG-HSOF-8 IMT65R107M1HXUMA1
- RS Stock No.:
- 349-054
- Mfr. Part No.:
- IMT65R107M1HXUMA1
- Brand:
- Infineon
Bulk discount available
Subtotal (1 pack of 2 units)*
£10.69
(exc. VAT)
£12.828
(inc. VAT)
FREE delivery for orders over £50.00
Temporarily out of stock
- Shipping from 28 April 2026
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Units | Per unit | Per Pack* |
---|---|---|
2 - 18 | £5.345 | £10.69 |
20 - 198 | £4.81 | £9.62 |
200 + | £4.44 | £8.88 |
*price indicative
- RS Stock No.:
- 349-054
- Mfr. Part No.:
- IMT65R107M1HXUMA1
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
---|---|---|
Brand | Infineon | |
Channel Type | N | |
Maximum Continuous Drain Current | 26 A | |
Maximum Drain Source Voltage | 650 V | |
Series | IMT | |
Package Type | PG-HSOF-8 | |
Mounting Type | Surface Mount | |
Pin Count | 8 | |
Channel Mode | Enhancement | |
Number of Elements per Chip | 1 | |
Transistor Material | SiC | |
Select all | ||
---|---|---|
Brand Infineon | ||
Channel Type N | ||
Maximum Continuous Drain Current 26 A | ||
Maximum Drain Source Voltage 650 V | ||
Series IMT | ||
Package Type PG-HSOF-8 | ||
Mounting Type Surface Mount | ||
Pin Count 8 | ||
Channel Mode Enhancement | ||
Number of Elements per Chip 1 | ||
Transistor Material SiC | ||
- COO (Country of Origin):
- MY
The Infineon CoolSiC MOSFET 650 V G1 is built on over 20 years of solid silicon carbide technology developed by Infineon. By leveraging the unique characteristics of wide bandgap SiC materials, the 650 V CoolSiC MOSFET delivers an exceptional combination of performance, reliability, and ease of use. It is designed for high temperature and harsh operating conditions, making it ideal for demanding applications. This MOSFET enables the simplified and cost-effective deployment of systems with the highest efficiency, addressing the increasing needs of modern power electronics.
Optimized switching behaviour at higher currents
Commutation robust fast body diode with low Qfr
Increased avalanche capability
Compatible with standard drivers
Kelvin source provides up to 4 times lower switching losses
Commutation robust fast body diode with low Qfr
Increased avalanche capability
Compatible with standard drivers
Kelvin source provides up to 4 times lower switching losses