Infineon AIM SiC N-Channel MOSFET, 75 A, 750 V, 4-Pin PG-TO247-4 AIMZA75R020M1HXKSA1
- RS Stock No.:
- 348-940
- Mfr. Part No.:
- AIMZA75R020M1HXKSA1
- Brand:
- Infineon
Bulk discount available
Subtotal (1 unit)*
£19.50
(exc. VAT)
£23.40
(inc. VAT)
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- Shipping from 29 April 2026
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Units | Per unit |
|---|---|
| 1 - 9 | £19.50 |
| 10 - 99 | £17.55 |
| 100 + | £16.19 |
*price indicative
- RS Stock No.:
- 348-940
- Mfr. Part No.:
- AIMZA75R020M1HXKSA1
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 75 A | |
| Maximum Drain Source Voltage | 750 V | |
| Package Type | PG-TO247-4 | |
| Series | AIM | |
| Mounting Type | Through Hole | |
| Pin Count | 4 | |
| Channel Mode | Enhancement | |
| Transistor Material | SiC | |
| Number of Elements per Chip | 1 | |
Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type N | ||
Maximum Continuous Drain Current 75 A | ||
Maximum Drain Source Voltage 750 V | ||
Package Type PG-TO247-4 | ||
Series AIM | ||
Mounting Type Through Hole | ||
Pin Count 4 | ||
Channel Mode Enhancement | ||
Transistor Material SiC | ||
Number of Elements per Chip 1 | ||
- COO (Country of Origin):
- CN
The Infineon 750 V CoolSiC MOSFET is built over the solid silicon carbide technology developed in Infineon in more than 20 years. Leveraging the wide bandgapSiC material characteristics, the 750V CoolSiC MOSFET offers a unique combination of performance, reliability and ease of use. Suitable for high temperature and harsh operations, it enables the simplified and cost effective deployment of the highest system efficiency.
Infineon proprietary die attach technology
Driver source pin available
Enhanced robustness and reliability for bus voltages beyond 500 V
Superior efficiency in hard switching
Higher switching frequency in soft switching topologies
Robustness against parasitic turn on for unipolar gate driving
Reduced switching losses through improved gate control
Driver source pin available
Enhanced robustness and reliability for bus voltages beyond 500 V
Superior efficiency in hard switching
Higher switching frequency in soft switching topologies
Robustness against parasitic turn on for unipolar gate driving
Reduced switching losses through improved gate control
