RF MOSFET Transistors

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Subtotal 10 units (supplied in a tube)*

£704.00

(exc. VAT)

£844.80

(inc. VAT)

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Units
Per unit
10 +£70.40

*price indicative

Packaging Options:
RS Stock No.:
330-274P
Mfr. Part No.:
PD57060-E
Brand:
STMicroelectronics
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Brand

STMicroelectronics

Channel Type

N

Maximum Continuous Drain Current

7 A

Maximum Drain Source Voltage

65 V

Series

PD5

Package Type

PowerSO-10RF

Mounting Type

Surface Mount

Channel Mode

Enhancement

Transistor Material

Plastic

COO (Country of Origin):
MY
The STMicroelectronics RF power transistor is a common source N-channel, enhancement-mode lateral field-effect RF power MOSFET. It is designed for high gain, broad band commercial and industrial applications. It operates at 28 V in common source mode at frequencies up to 1 GHz. The device boasts the excellent gain, linearity and reliability of ST’s latest LDMOS technology mounted in the first true SMD plastic RF power package, PowerSO-10RF. Device’s superior linearity performance makes it an ideal solution for base station applications. The PowerSO-10 plastic package, designed to offer high reliability, is the first ST JEDEC approved, high power SMD package. It has been specially optimized for RF needs and offers excellent RF performances and ease of assembly. Mounting recommendations are available in www.st.com/rf/ (look for application note AN1294).

Excellent thermal stability
Common source configuration
New RF plastic package