onsemi NTH SiC N-Channel MOSFET, 50 A, 650 V, 4-Pin TO-247-4L NTH4L032N065M3S

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£53.30

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£64.00

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Packaging Options:
RS Stock No.:
327-805P
Mfr. Part No.:
NTH4L032N065M3S
Brand:
onsemi
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Brand

onsemi

Channel Type

N

Maximum Continuous Drain Current

50 A

Maximum Drain Source Voltage

650 V

Package Type

TO-247-4L

Series

NTH

Mounting Type

Through Hole

Pin Count

4

Transistor Material

SiC

Number of Elements per Chip

1

COO (Country of Origin):
CN
The ON Semiconductor Silicon Carbide (SiC) MOSFET, EliteSiC, is a 650 V, 32 mΩ device in the M3S TO247-4L package. It features ultra-low gate charge (QG(tot) = 55 nC) and high-speed switching with low capacitance (Coss = 114 pF). The device is 100% avalanche tested and is halide-free and RoHS compliant with exemption 7a. It is also Pb-free on the second-level interconnection, making it suitable for demanding power electronics applications.

High efficiency and reduced switching losses
Robust and reliable operation in harsh environments
Ideal for automotive industrial and renewable energy applications