Infineon HEXFET P-Channel MOSFET, 760 mA, 30 V, 3-Pin SOT-23 IRLML5103TRPBF
- RS Stock No.:
- 302-038P
- Mfr. Part No.:
- IRLML5103TRPBF
- Brand:
- Infineon
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- RS Stock No.:
- 302-038P
- Mfr. Part No.:
- IRLML5103TRPBF
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | P | |
| Maximum Continuous Drain Current | 760 mA | |
| Maximum Drain Source Voltage | 30 V | |
| Package Type | SOT-23 | |
| Series | HEXFET | |
| Mounting Type | Surface Mount | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 600 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 1V | |
| Minimum Gate Threshold Voltage | 1V | |
| Maximum Power Dissipation | 540 mW | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | -20 V, +20 V | |
| Maximum Operating Temperature | +150 °C | |
| Length | 3.04mm | |
| Number of Elements per Chip | 1 | |
| Transistor Material | Si | |
| Width | 1.4mm | |
| Typical Gate Charge @ Vgs | 3.4 nC @ 10 V | |
| Minimum Operating Temperature | -55 °C | |
| Height | 1.02mm | |
| Forward Diode Voltage | 1.2V | |
Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type P | ||
Maximum Continuous Drain Current 760 mA | ||
Maximum Drain Source Voltage 30 V | ||
Package Type SOT-23 | ||
Series HEXFET | ||
Mounting Type Surface Mount | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 600 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 1V | ||
Minimum Gate Threshold Voltage 1V | ||
Maximum Power Dissipation 540 mW | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -20 V, +20 V | ||
Maximum Operating Temperature +150 °C | ||
Length 3.04mm | ||
Number of Elements per Chip 1 | ||
Transistor Material Si | ||
Width 1.4mm | ||
Typical Gate Charge @ Vgs 3.4 nC @ 10 V | ||
Minimum Operating Temperature -55 °C | ||
Height 1.02mm | ||
Forward Diode Voltage 1.2V | ||
P-Channel Power MOSFET 30V, Infineon
Infineon's range of discrete HEXFET® power MOSFETs includes P-channel devices in surface mount and leaded packages and form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.
Infineon HEXFET Series MOSFET, 760mA Maximum Continuous Drain Current, 540 mW Maximum Power Dissipation - IRLML5103TRPBF
This MOSFET is a versatile electronic component suited for efficient power switching applications. It is designed for use in automation, electronics, and mechanical industries, offering a compact solution for high-performance tasks. Its enhancement channel mode improves operational efficiency, making it a popular choice in applications that require dependable MOSFET functionality.
Features & Benefits
• Compact SOT-23 package appropriate for space-constrained designs
• High continuous drain current of 760 mA for enhanced durability
• Maximum drain-source voltage of 30 V for a range of applications
• Low Rds(on) of 600mΩ minimises power loss and boosts efficiency
• Typical gate charge of 3.4nC lowers switching losses
• High continuous drain current of 760 mA for enhanced durability
• Maximum drain-source voltage of 30 V for a range of applications
• Low Rds(on) of 600mΩ minimises power loss and boosts efficiency
• Typical gate charge of 3.4nC lowers switching losses
Applications
• Utilised in power management and conversion solutions
• Suitable for industrial automation setups
• Ideal for switch-mode power supply designs
• Supports battery management systems in electronic devices
• Employed in motor control that require efficient power switching
• Suitable for industrial automation setups
• Ideal for switch-mode power supply designs
• Supports battery management systems in electronic devices
• Employed in motor control that require efficient power switching
How does the MOSFET perform in high-temperature environments?
It functions effectively at temperatures up to +150°C, ensuring consistent performance under challenging conditions.
What is the significance of the low Rds(on) value?
A low Rds(on) of 600mΩ reduces energy loss during operation, enhancing overall system efficiency.
Can this MOSFET be used in compact designs?
Yes, the SOT-23 package enables integration into compact applications without compromising performance.
What is the maximum gate-source voltage this device can handle?
It can tolerate a maximum gate-source voltage of ±20V, ensuring safe operation within specified limits.
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
