Infineon HEXFET N-Channel MOSFET, 1.2 A, 30 V, 3-Pin SOT-23 IRLML2803TRPBF
- RS Stock No.:
- 302-022P
- Mfr. Part No.:
- IRLML2803TRPBF
- Brand:
- Infineon
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Units | Per unit |
|---|---|
| 50 - 245 | £0.222 |
| 250 - 495 | £0.172 |
| 500 - 1245 | £0.136 |
| 1250 + | £0.118 |
*price indicative
- RS Stock No.:
- 302-022P
- Mfr. Part No.:
- IRLML2803TRPBF
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 1.2 A | |
| Maximum Drain Source Voltage | 30 V | |
| Series | HEXFET | |
| Package Type | SOT-23 | |
| Mounting Type | Surface Mount | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 250 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 1V | |
| Minimum Gate Threshold Voltage | 1V | |
| Maximum Power Dissipation | 540 mW | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | -20 V, +20 V | |
| Transistor Material | Si | |
| Number of Elements per Chip | 1 | |
| Length | 3.04mm | |
| Maximum Operating Temperature | +150 °C | |
| Typical Gate Charge @ Vgs | 3.3 nC @ 10 V | |
| Width | 1.4mm | |
| Minimum Operating Temperature | -55 °C | |
| Forward Diode Voltage | 1.2V | |
| Height | 1.02mm | |
Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type N | ||
Maximum Continuous Drain Current 1.2 A | ||
Maximum Drain Source Voltage 30 V | ||
Series HEXFET | ||
Package Type SOT-23 | ||
Mounting Type Surface Mount | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 250 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 1V | ||
Minimum Gate Threshold Voltage 1V | ||
Maximum Power Dissipation 540 mW | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -20 V, +20 V | ||
Transistor Material Si | ||
Number of Elements per Chip 1 | ||
Length 3.04mm | ||
Maximum Operating Temperature +150 °C | ||
Typical Gate Charge @ Vgs 3.3 nC @ 10 V | ||
Width 1.4mm | ||
Minimum Operating Temperature -55 °C | ||
Forward Diode Voltage 1.2V | ||
Height 1.02mm | ||
N-Channel Power MOSFET 30V, Infineon
The Infineon range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages. And form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.
Infineon HEXFET Series MOSFET, 1.2A Maximum Continuous Drain Current, 540 mW Maximum Power Dissipation - IRLML2803TRPBF
This N-channel MOSFET delivers enhanced performance and reliability for a range of electronic applications. Designed with Hexfet technology, it operates efficiently in surface mount configurations, making it suitable for compact designs in the automation and electrical sectors. The combination of low RDS(on) and a high continuous drain current supports optimal power management in various conditions.
Features & Benefits
• Supports a maximum continuous drain current of 1.2A for effective performance
• High maximum drain-source voltage of 30V allows for versatile usage
• Low maximum drain-source resistance of 250mΩ minimises power losses
• Enhancement mode operation enables efficient switching capabilities
• Compact SOT-23 package is ideal for space-constrained applications
• Operates at high temperatures, with a maximum operating temperature of +150°C
• High maximum drain-source voltage of 30V allows for versatile usage
• Low maximum drain-source resistance of 250mΩ minimises power losses
• Enhancement mode operation enables efficient switching capabilities
• Compact SOT-23 package is ideal for space-constrained applications
• Operates at high temperatures, with a maximum operating temperature of +150°C
Applications
• Utilised in DC-DC converters for effective energy management
• Employed in motor control circuits for improved precision
• Suitable for power supply switching in consumer electronics
• Integrated into automation systems for efficient load management
• Employed in motor control circuits for improved precision
• Suitable for power supply switching in consumer electronics
• Integrated into automation systems for efficient load management
What is the optimal gate voltage for operation?
The optimal gate voltage for this device is +10V, allowing for efficient switching and performance.
How does it perform in high temperatures?
This component can function at temperatures up to +150°C, ensuring reliability in thermal conditions.
Can it handle pulsed drain currents?
Yes, it supports pulsed drain currents significantly above continuous ratings, accommodating short current surges.
What mounting type is recommended for this device?
Surface mount is the recommended type, as it provides better thermal performance and space efficiency in circuit designs.
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
