Dual P-Channel MOSFET, 1.7 A, 20 V, 8-Pin MSOP Infineon IRF7504TRPBF
- RS Stock No.:
- 301-748
- Mfr. Part No.:
- IRF7504TRPBF
- Brand:
- Infineon
Currently unavailable
We don’t know if this item will be back in stock, it is being discontinued by the manufacturer.
- RS Stock No.:
- 301-748
- Mfr. Part No.:
- IRF7504TRPBF
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | P | |
| Maximum Continuous Drain Current | 1.7 A | |
| Maximum Drain Source Voltage | 20 V | |
| Package Type | MSOP | |
| Mounting Type | Surface Mount | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance | 270 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 0.7V | |
| Minimum Gate Threshold Voltage | 0.7V | |
| Maximum Power Dissipation | 1.25 W | |
| Transistor Configuration | Isolated | |
| Maximum Gate Source Voltage | -12 V, +12 V | |
| Typical Gate Charge @ Vgs | 5.4 nC @ 4.5 V | |
| Number of Elements per Chip | 2 | |
| Maximum Operating Temperature | +150 °C | |
| Length | 3mm | |
| Width | 3mm | |
| Transistor Material | Si | |
| Height | 0.86mm | |
| Minimum Operating Temperature | -55 °C | |
| Series | HEXFET | |
Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type P | ||
Maximum Continuous Drain Current 1.7 A | ||
Maximum Drain Source Voltage 20 V | ||
Package Type MSOP | ||
Mounting Type Surface Mount | ||
Pin Count 8 | ||
Maximum Drain Source Resistance 270 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 0.7V | ||
Minimum Gate Threshold Voltage 0.7V | ||
Maximum Power Dissipation 1.25 W | ||
Transistor Configuration Isolated | ||
Maximum Gate Source Voltage -12 V, +12 V | ||
Typical Gate Charge @ Vgs 5.4 nC @ 4.5 V | ||
Number of Elements per Chip 2 | ||
Maximum Operating Temperature +150 °C | ||
Length 3mm | ||
Width 3mm | ||
Transistor Material Si | ||
Height 0.86mm | ||
Minimum Operating Temperature -55 °C | ||
Series HEXFET | ||
Dual P-Channel Power MOSFET, Infineon
Infineon’s dual power MOSFETs integrate two HEXFET® devices to provide space-saving, cost-effective switching solutions in high component density designs where board space is at a premium. A variety of package options is available and designers can choose the Dual P-channel configuration.
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
