N-Channel MOSFET, 900 mA, 150 V, 6-Pin TSOP Infineon IRF5802TRPBF

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We don’t know if this item will be back in stock, it is being discontinued by the manufacturer.
Packaging Options:
RS Stock No.:
301-647
Mfr. Part No.:
IRF5802TRPBF
Brand:
Infineon
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Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

900 mA

Maximum Drain Source Voltage

150 V

Package Type

TSOP

Mounting Type

Surface Mount

Pin Count

6

Maximum Drain Source Resistance

1.2 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

5.5V

Minimum Gate Threshold Voltage

3V

Maximum Power Dissipation

2 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-30 V, +30 V

Typical Gate Charge @ Vgs

4.5 nC @ 10 V

Maximum Operating Temperature

+150 °C

Number of Elements per Chip

1

Width

1.5mm

Transistor Material

Si

Length

3mm

Minimum Operating Temperature

-55 °C

Series

HEXFET

Height

0.9mm

N-Channel Power MOSFET 150V to 600V, Infineon


Infineon's range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages and form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.


MOSFET Transistors, Infineon


Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.