Infineon CoolSiC 2000 V SiC Trench MOSFET Type N-Channel MOSFET, 60 A, 2000 V Enhancement, 4-Pin PG-TO-247-4-PLUS-NT14
- RS Stock No.:
- 284-861P
- Mfr. Part No.:
- IMYH200R012M1HXKSA1
- Brand:
- Infineon
Subtotal 1 unit (supplied in a tube)*
£85.47
(exc. VAT)
£102.56
(inc. VAT)
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- Shipping from 18 January 2027
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Units | Per unit |
|---|---|
| 1 + | £85.47 |
*price indicative
- RS Stock No.:
- 284-861P
- Mfr. Part No.:
- IMYH200R012M1HXKSA1
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 60A | |
| Maximum Drain Source Voltage Vds | 2000V | |
| Series | CoolSiC 2000 V SiC Trench MOSFET | |
| Package Type | PG-TO-247-4-PLUS-NT14 | |
| Mount Type | Through Hole | |
| Pin Count | 4 | |
| Channel Mode | Enhancement | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | RoHS Compliant | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 60A | ||
Maximum Drain Source Voltage Vds 2000V | ||
Series CoolSiC 2000 V SiC Trench MOSFET | ||
Package Type PG-TO-247-4-PLUS-NT14 | ||
Mount Type Through Hole | ||
Pin Count 4 | ||
Channel Mode Enhancement | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals RoHS Compliant | ||
Automotive Standard No | ||
- COO (Country of Origin):
- MY
The Infineon CoolSiC 2000 V SiC Trench MOSFET stands out as a high performance component designed for demanding applications. Leveraging Advanced silicon carbide technology, it delivers exceptional efficiency and thermal performance, making it Ideal for use in modern power systems. With a robust structure and innovative features, this device ensures reliability across various applications, including string inverters, solar power optimisation, and electric vehicle charging. The carefully engineered MOSFET is optimally suited for high voltage environments, providing superior operational advantages for both industrial and commercial usage. Its Advanced interconnection technology further contributes to its prestigious reputation in the market, enabling prolonged device lifespan and enhanced power management capabilities.
Delivers low switching losses for efficiency
Robust body diode for hard commutation
Benchmark gate threshold voltage for control
Very low on state resistance for conductivity
High thermal resistance minimizes overheating
Suitable for high voltage up to 2000 V
