Infineon CoolSiC 2000 V SiC Trench MOSFET SiC N-Channel MOSFET, 123 A, 2000 V, 4-Pin PG-TO247-4-PLUS-NT14
- RS Stock No.:
- 284-861P
- Mfr. Part No.:
- IMYH200R012M1HXKSA1
- Brand:
- Infineon
Currently unavailable
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- RS Stock No.:
- 284-861P
- Mfr. Part No.:
- IMYH200R012M1HXKSA1
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 123 A | |
| Maximum Drain Source Voltage | 2000 V | |
| Package Type | PG-TO247-4-PLUS-NT14 | |
| Series | CoolSiC 2000 V SiC Trench MOSFET | |
| Mounting Type | Through Hole | |
| Pin Count | 4 | |
| Channel Mode | Enhancement | |
| Transistor Material | SiC | |
| Number of Elements per Chip | 1 | |
Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type N | ||
Maximum Continuous Drain Current 123 A | ||
Maximum Drain Source Voltage 2000 V | ||
Package Type PG-TO247-4-PLUS-NT14 | ||
Series CoolSiC 2000 V SiC Trench MOSFET | ||
Mounting Type Through Hole | ||
Pin Count 4 | ||
Channel Mode Enhancement | ||
Transistor Material SiC | ||
Number of Elements per Chip 1 | ||
- COO (Country of Origin):
- MY
The Infineon CoolSiC 2000 V SiC Trench MOSFET stands out as a high performance component designed for demanding applications. Leveraging advanced silicon carbide technology, it delivers exceptional efficiency and thermal performance, making it ideal for use in modern power systems. With a robust structure and innovative features, this device ensures reliability across various applications, including string inverters, solar power optimisation, and electric vehicle charging. The carefully engineered MOSFET is optimally suited for high voltage environments, providing superior operational advantages for both industrial and commercial usage. Its advanced interconnection technology further contributes to its prestigious reputation in the market, enabling prolonged device lifespan and enhanced power management capabilities.
Delivers low switching losses for efficiency
Robust body diode for hard commutation
Benchmark gate threshold voltage for control
Very low on state resistance for conductivity
High thermal resistance minimizes overheating
Suitable for high voltage up to 2000 V
Robust body diode for hard commutation
Benchmark gate threshold voltage for control
Very low on state resistance for conductivity
High thermal resistance minimizes overheating
Suitable for high voltage up to 2000 V
