Infineon OptiMOS Power Transistor SiC P-Channel MOSFET, 19.5 A, 60 V, 8-Pin PG-TSDSON-8 FL ISZ810P06LMATMA1

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Packaging Options:
RS Stock No.:
284-806P
Mfr. Part No.:
ISZ810P06LMATMA1
Brand:
Infineon
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Brand

Infineon

Channel Type

P

Maximum Continuous Drain Current

19.5 A

Maximum Drain Source Voltage

60 V

Package Type

PG-TSDSON-8 FL

Series

OptiMOS Power Transistor

Mounting Type

Surface Mount

Pin Count

8

Channel Mode

Enhancement

Transistor Material

SiC

Number of Elements per Chip

1

The Infineon MOSFET is an advanced power transistor delivers exceptional performance and reliability, making it an ideal choice for demanding industrial applications. The Infineon OptiMOS Power Transistor series excels in energy efficiency with its low on resistance characteristics, ensuring minimal energy loss during operation. Its robust design is fully qualified according to JEDEC standards, providing peace of mind for engineers seeking durable components. Operating at 60V, it is tailored for high performance applications while maintaining low thermal resistance, allowing for effective heat management.

P channel configuration optimises current control
Logic level compatibility for easy interfacing
Avalanche tested for reliability under stress
Pb free lead plating meets environmental regulations
Halogen free construction supports cleaner production
Enhanced thermal characteristics for consistent operation
High continuous drain current for diverse applications