Infineon OptiMOS Power Transistor SiC P-Channel MOSFET, 22 A, 150 V, 8-Pin PG-TDSON-8 ISC16DP15LMATMA1

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RS Stock No.:
284-785
Mfr. Part No.:
ISC16DP15LMATMA1
Brand:
Infineon
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Brand

Infineon

Channel Type

P

Maximum Continuous Drain Current

22 A

Maximum Drain Source Voltage

150 V

Package Type

PG-TDSON-8

Series

OptiMOS Power Transistor

Mounting Type

Surface Mount

Pin Count

8

Channel Mode

Enhancement

Number of Elements per Chip

1

Transistor Material

SiC

The Infineon MOSFET features an OptiMOS Power Transistor is designed to deliver exceptional performance for a range of industrial applications. With its advanced P channel architecture and robust construction, it ensures reliability even under demanding conditions. Boasting a breakdown voltage of 150 V, this transistor is engineered to handle significant voltages effectively. Its low on resistance helps improve efficiency, making it a valuable component in power management systems. By aligning with RoHS compliance standards, this transistor further emphasises its commitment to environmental sustainability, making it an excellent choice for forward thinking projects.

Very low on resistance for efficiency
100% avalanche tested for reliability
Logic level gate drive compatibility
Excellent thermal performance reduces heat
RoHS compliant for eco friendliness
Qualified per JEDEC standards for reliability
Compact design for adaptable configurations
Halogen free lead plating for environmental safety