Infineon OptiMOS SiC N-Channel MOSFET, 99 A, 80 V, 8-Pin PG-WHSON-8 IQE050N08NM5SCATMA1

Bulk discount available

Subtotal 50 units (supplied on a continuous strip)*

£92.80

(exc. VAT)

£111.35

(inc. VAT)

Add to Basket
Select or type quantity
In Stock
  • 100 unit(s) ready to ship
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units
Per unit
50 - 95£1.856
100 - 495£1.72
500 - 995£1.582
1000 +£1.524

*price indicative

Packaging Options:
RS Stock No.:
284-774P
Mfr. Part No.:
IQE050N08NM5SCATMA1
Brand:
Infineon
Find similar products by selecting one or more attributes.
Select all

Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

99 A

Maximum Drain Source Voltage

80 V

Series

OptiMOS

Package Type

PG-WHSON-8

Mounting Type

Surface Mount

Pin Count

8

Channel Mode

Enhancement

Number of Elements per Chip

1

Transistor Material

SiC

The Infineon MOSFET features an OptiMOS 5 Power Transistor, rated at 80V, is specifically designed to enhance the efficiency and performance of modern electronic applications. It excels in providing superior synchronous rectification, ensuring minimal energy losses and maximising overall system reliability. Thanks to its low on resistance and exceptional thermal management, this transistor is ideal for demanding industrial applications, making it a preferred choice for engineers aiming for performance optimisation. With extensive avalanche testing and robust construction, it promises longevity in severe environments and aligns with global RoHS standards, ensuring a strong commitment to safety and sustainability.

Optimised for synchronous rectification
N channel for easy circuit integration
Low on resistance reduces heat generation
Exceptional thermal resistance prevents overheating
100% avalanche tested for reliability
Pb free lead plating for eco friendly manufacturing
Halogen free construction meets regulations