Infineon OptiMOS SiC N-Channel MOSFET, 99 A, 80 V, 8-Pin PG-WHSON-8 IQE050N08NM5SCATMA1

Subtotal (1 reel of 6000 units)*

£8,466.00

(exc. VAT)

£10,158.00

(inc. VAT)

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  • 999,996,000 unit(s) shipping from 14 January 2026
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Per unit
Per Reel*
6000 +£1.411£8,466.00

*price indicative

RS Stock No.:
284-773
Mfr. Part No.:
IQE050N08NM5SCATMA1
Brand:
Infineon
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Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

99 A

Maximum Drain Source Voltage

80 V

Package Type

PG-WHSON-8

Series

OptiMOS

Mounting Type

Surface Mount

Pin Count

8

Channel Mode

Enhancement

Number of Elements per Chip

1

Transistor Material

SiC

The Infineon MOSFET features an OptiMOS 5 Power Transistor, rated at 80V, is specifically designed to enhance the efficiency and performance of modern electronic applications. It excels in providing superior synchronous rectification, ensuring minimal energy losses and maximising overall system reliability. Thanks to its low on resistance and exceptional thermal management, this transistor is ideal for demanding industrial applications, making it a preferred choice for engineers aiming for performance optimisation. With extensive avalanche testing and robust construction, it promises longevity in severe environments and aligns with global RoHS standards, ensuring a strong commitment to safety and sustainability.

Optimised for synchronous rectification
N channel for easy circuit integration
Low on resistance reduces heat generation
Exceptional thermal resistance prevents overheating
100% avalanche tested for reliability
Pb free lead plating for eco friendly manufacturing
Halogen free construction meets regulations