Infineon OptiMOS SiC N-Channel MOSFET, 132 A, 60 V, 9-Pin PG-WHTFN-9 IQE030N06NM5CGSCATMA1

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Subtotal 50 units (supplied on a continuous strip)*

£88.40

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£106.10

(inc. VAT)

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100 - 495£1.638
500 - 995£1.508
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Packaging Options:
RS Stock No.:
284-758P
Mfr. Part No.:
IQE030N06NM5CGSCATMA1
Brand:
Infineon
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Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

132 A

Maximum Drain Source Voltage

60 V

Package Type

PG-WHTFN-9

Series

OptiMOS

Mounting Type

Surface Mount

Pin Count

9

Channel Mode

Enhancement

Number of Elements per Chip

1

Transistor Material

SiC

The Infineon MOSFET is a power transistor exemplifies cutting edge technology and performance, designed for efficient operation in demanding applications. Optimised for synchronous rectification, it assures superior thermal management and reliability, making it an ideal choice for various industrial uses. Built around the OptiMOS 5 platform, it is tailored to operate effectively within a 60V range while maintaining a compact footprint. Its robust design facilitates efficient switching, ensuring high performance while minimising losses.

Superior thermal resistance for reliability
Pb free plating for environmental compliance
100% avalanche testing for performance assurance
Exceptional gate charge for switching efficiency
Complies with halogen free standards
Ideal for rigorous industrial applications