Infineon CoolSiC MOSFET 650 V G1 SiC N-Channel MOSFET, 61 A, 650 V, 8-Pin PG-HSOF-8 IMT65R039M1HXUMA1
- RS Stock No.:
- 284-720P
- Mfr. Part No.:
- IMT65R039M1HXUMA1
- Brand:
- Infineon
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Subtotal 10 units (supplied on a continuous strip)*
£103.10
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£123.70
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In Stock
- 100 unit(s) ready to ship
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Units | Per unit |
|---|---|
| 10 - 99 | £10.31 |
| 100 + | £9.51 |
*price indicative
- RS Stock No.:
- 284-720P
- Mfr. Part No.:
- IMT65R039M1HXUMA1
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 61 A | |
| Maximum Drain Source Voltage | 650 V | |
| Series | CoolSiC MOSFET 650 V G1 | |
| Package Type | PG-HSOF-8 | |
| Mounting Type | Surface Mount | |
| Pin Count | 8 | |
| Channel Mode | Enhancement | |
| Transistor Material | SiC | |
| Number of Elements per Chip | 1 | |
Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type N | ||
Maximum Continuous Drain Current 61 A | ||
Maximum Drain Source Voltage 650 V | ||
Series CoolSiC MOSFET 650 V G1 | ||
Package Type PG-HSOF-8 | ||
Mounting Type Surface Mount | ||
Pin Count 8 | ||
Channel Mode Enhancement | ||
Transistor Material SiC | ||
Number of Elements per Chip 1 | ||
The Infineon CoolSiC MOSFET 650 V G1 is a pioneering power device that delivers exceptional performance by harnessing the advanced properties of silicon carbide technology. Designed for high efficiency and reliability, this MOSFET excels in applications demanding outstanding thermal stability and elevated performance under harsh conditions. With an innovative gate oxide structure and superior switching behaviour, it significantly reduces losses at higher currents, ensuring longevity and safety in various electrical environments. Perfectly suited for applications including power supply systems, EV charging infrastructure, and renewable energy solutions, the CoolSiC MOSFET stands as a versatile solution that meets the demanding requirements of modern power electronics. This device is a testament to over 20 years of engineering excellence, serving as a robust foundation for next generation energy solutions.
Optimised switching enhances performance
Robust body diode ensures reliable commutation
Excellent thermal management extends lifetimes
Efficient operation at elevated temperatures
Seamless integration with standard drivers
Kelvin source reduces switching losses
Complies with JEDEC standards for reliability
Versatile for enhanced power density in designs
Robust body diode ensures reliable commutation
Excellent thermal management extends lifetimes
Efficient operation at elevated temperatures
Seamless integration with standard drivers
Kelvin source reduces switching losses
Complies with JEDEC standards for reliability
Versatile for enhanced power density in designs
