Infineon CoolSiC MOSFET 650 V G1 SiC N-Channel MOSFET, 61 A, 650 V, 8-Pin PG-HSOF-8 IMT65R039M1HXUMA1

Subtotal (1 reel of 2000 units)*

£16,574.00

(exc. VAT)

£19,888.00

(inc. VAT)

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Per unit
Per Reel*
2000 +£8.287£16,574.00

*price indicative

RS Stock No.:
284-718
Mfr. Part No.:
IMT65R039M1HXUMA1
Brand:
Infineon
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Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

61 A

Maximum Drain Source Voltage

650 V

Package Type

PG-HSOF-8

Series

CoolSiC MOSFET 650 V G1

Mounting Type

Surface Mount

Pin Count

8

Channel Mode

Enhancement

Number of Elements per Chip

1

Transistor Material

SiC

The Infineon CoolSiC MOSFET 650 V G1 is a pioneering power device that delivers exceptional performance by harnessing the advanced properties of silicon carbide technology. Designed for high efficiency and reliability, this MOSFET excels in applications demanding outstanding thermal stability and elevated performance under harsh conditions. With an innovative gate oxide structure and superior switching behaviour, it significantly reduces losses at higher currents, ensuring longevity and safety in various electrical environments. Perfectly suited for applications including power supply systems, EV charging infrastructure, and renewable energy solutions, the CoolSiC MOSFET stands as a versatile solution that meets the demanding requirements of modern power electronics. This device is a testament to over 20 years of engineering excellence, serving as a robust foundation for next generation energy solutions.

Optimised switching enhances performance
Robust body diode ensures reliable commutation
Excellent thermal management extends lifetimes
Efficient operation at elevated temperatures
Seamless integration with standard drivers
Kelvin source reduces switching losses
Complies with JEDEC standards for reliability
Versatile for enhanced power density in designs