Infineon OptiMOS SiC N-Channel MOSFET, 301 A, 40 V, 8-Pin PG-WSON-8 BSC009N04LSSCATMA1

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Packaging Options:
RS Stock No.:
284-697P
Mfr. Part No.:
BSC009N04LSSCATMA1
Brand:
Infineon
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Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

301 A

Maximum Drain Source Voltage

40 V

Package Type

PG-WSON-8

Series

OptiMOS

Mounting Type

Surface Mount

Pin Count

8

Channel Mode

Enhancement

Number of Elements per Chip

1

Transistor Material

SiC

The Infineon OptiMOS Power MOSFET is engineered to provide exceptional performance, making it an ideal choice for industrial applications. Designed with a dual side cooled package, this device excels in thermal resistance, ensuring optimal performance even in demanding conditions. This MOSFET is fully qualified according to JEDEC standards, highlighting its reliability and stability. With a maximum operating temperature of 175°C, it supports extended operational ranges, making it suitable for various applications that require robust performance. Comprehensive electrical characteristics validate its design for synchronous rectification, ensuring it's a forward thinking solution for modern electronic demands.

Dual side cooling for thermal efficiency
Low on resistance minimizes energy losses
High junction temperature rating for durability
100 percent avalanche tested for reliability
Pb free and RoHS compliant standards
Halogen free construction reduces footprint
Qualified for industrial applications and JEDEC standards