Infineon OptiMOS SiC N-Channel MOSFET, 89 A, 150 V, 8-Pin PG-WSON-8 BSC093N15NS5SCATMA1

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Packaging Options:
RS Stock No.:
284-645P
Mfr. Part No.:
BSC093N15NS5SCATMA1
Brand:
Infineon
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Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

89 A

Maximum Drain Source Voltage

150 V

Package Type

PG-WSON-8

Series

OptiMOS

Mounting Type

Surface Mount

Pin Count

8

Channel Mode

Enhancement

Number of Elements per Chip

1

Transistor Material

SiC

The Infineon OptiMOS Power MOSFET is a high performance N channel MOSFET designed for demanding applications requiring optimal efficiency. With an operating voltage of up to 150 V and outstanding thermal performance. Engineered with dual side cooling technology, it provides exceptional thermal resistance, thereby ensuring reliable operation even under challenging conditions. The integration of innovative design elements reduces on resistance and enhances the overall efficiency of power management systems. Ideal for industrial applications, its robust construction guarantees longevity and reliable performance.

Dual side cooled package for thermal management
Excellent power efficiency for high frequency use
Wide operating temperature range for reliability
Low on resistance enhances energy efficiency
Fast switching speeds for advanced power applications
Qualified to JEDEC standards for industry