Infineon OptiMOS SiC N-Channel MOSFET, 171 A, 100 V, 8-Pin PG-WSON-8 BSC030N10NS5SCATMA1

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Packaging Options:
RS Stock No.:
284-640
Mfr. Part No.:
BSC030N10NS5SCATMA1
Brand:
Infineon
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Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

171 A

Maximum Drain Source Voltage

100 V

Package Type

PG-WSON-8

Series

OptiMOS

Mounting Type

Surface Mount

Pin Count

8

Channel Mode

Enhancement

Transistor Material

SiC

Number of Elements per Chip

1

The Infineon OptiMOS Power MOSFET is designed to deliver exceptional performance in demanding applications. As part of the OptiMOS 5 series, it combines ground breaking technology with robust features to meet the needs of industrial applications. With a substantial drain source breakdown voltage of 100V and significant avalanche capability, this component guarantees robust operation in high stress situations. The product’s innovative design streamlines heat dissipation, preserving performance even under heavy loads, which translates to increased longevity and reliability in your circuits.

Dual side cooling optimizes heat distribution
175°C rating for challenging environments
N channel configuration enhances flexibility
Superior thermal resistance maximizes efficiency
100% avalanche tested for reliability
Pb free plating complies with RoHS
Halogen free construction for eco friendliness
Qualified per JEDEC standards for industry