Infineon OptiMOS SiC N-Channel MOSFET, 171 A, 100 V, 8-Pin PG-WSON-8 BSC023N08NS5SCATMA1

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Packaging Options:
RS Stock No.:
284-638P
Mfr. Part No.:
BSC023N08NS5SCATMA1
Brand:
Infineon
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Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

171 A

Maximum Drain Source Voltage

100 V

Series

OptiMOS

Package Type

PG-WSON-8

Mounting Type

Surface Mount

Pin Count

8

Channel Mode

Enhancement

Transistor Material

SiC

Number of Elements per Chip

1

The Infineon OptiMOS Power MOSFET is engineered to excel in demanding applications requiring high efficiency and robust performance. Designed with an innovative PG WSON 8 package, this transistor delivers excellent thermal management, ensuring optimal heat dissipation during operation. Moreover, its dual side cooling capability significantly enhances thermal performance, and the extended operational temperature range allows for greater versatility in various environments. With a focus on reliability, this device has undergone rigorous testing to ensure it meets the stringent quality standards expected in industrial applications, making it a reliable choice for engineers looking to improve system performance while managing thermal constraints.

High efficiency minimizes energy loss
Dual side cooling enhances thermal management
Compact design for space saving integration
Meets high reliability standards
Suitable for various industrial applications