onsemi NXH Dual Silicon N/P-Channel MOSFET, 800 A, 1200 V, 11-Pin PIM11 NXH800H120L7QDSG
- RS Stock No.:
- 277-059P
- Mfr. Part No.:
- NXH800H120L7QDSG
- Brand:
- onsemi
Subtotal 1 unit (supplied in a tray)*
£179.29
(exc. VAT)
£215.15
(inc. VAT)
FREE delivery for orders over £50.00
In Stock
- 24 unit(s) ready to ship
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit |
|---|---|
| 1 + | £179.29 |
*price indicative
- RS Stock No.:
- 277-059P
- Mfr. Part No.:
- NXH800H120L7QDSG
- Brand:
- onsemi
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | onsemi | |
| Channel Type | N, P | |
| Maximum Continuous Drain Current | 800 A | |
| Maximum Drain Source Voltage | 1200 V | |
| Series | NXH | |
| Package Type | PIM11 | |
| Mounting Type | Through Hole | |
| Pin Count | 11 | |
| Channel Mode | Enhancement | |
| Transistor Material | Silicon | |
| Number of Elements per Chip | 2 | |
Select all | ||
|---|---|---|
Brand onsemi | ||
Channel Type N, P | ||
Maximum Continuous Drain Current 800 A | ||
Maximum Drain Source Voltage 1200 V | ||
Series NXH | ||
Package Type PIM11 | ||
Mounting Type Through Hole | ||
Pin Count 11 | ||
Channel Mode Enhancement | ||
Transistor Material Silicon | ||
Number of Elements per Chip 2 | ||
- COO (Country of Origin):
- CN
The ON Semiconductor Half Bridge IGBT Power Module features integrated Field Stop Trench 7 IGBTs and Gen. 7 diodes, providing lower conduction and switching losses. This design enables high efficiency and superior reliability. The module is configured as a 1200V, 800A 2-in-1 half-bridge, making it ideal for applications that require robust performance and optimal power conversion efficiency.
NTC thermistor
Isolated base plate
Solderable pins
Low inductive layout
Pb free
Isolated base plate
Solderable pins
Low inductive layout
Pb free