onsemi NXH Hex SiC N/P-Channel MOSFET, 192 A, 1000 V, 1200 V, 44-Pin PIM44 NXH600B100H4Q2F2PG

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Subtotal 1 unit (supplied in a tray)*

£194.32

(exc. VAT)

£233.18

(inc. VAT)

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1 +£194.32

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Packaging Options:
RS Stock No.:
277-057P
Mfr. Part No.:
NXH600B100H4Q2F2PG
Brand:
onsemi
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Brand

onsemi

Channel Type

N, P

Maximum Continuous Drain Current

192 A

Maximum Drain Source Voltage

1000 V, 1200 V

Series

NXH

Package Type

PIM44

Mounting Type

Snap-In

Pin Count

44

Channel Mode

Enhancement

Transistor Material

SiC

Number of Elements per Chip

6

The ON Semiconductor Hybrid Three Channel Symmetric Boost Module features two 1000V, 200A IGBTs and two 1200V, 60A SiC diodes per channel, along with an NTC thermistor for temperature monitoring. The module utilizes trench with field stop technology for high efficiency, significantly reducing switching losses and system power dissipation. Its design provides high power density, making it suitable for demanding power applications that require optimal performance and thermal management.

Low inductive layout
Low package height
Pb free
Halide free and RoHS compliant