IXYS HiperFET, Polar N-Channel MOSFET, 26 A, 600 V, 3-Pin TO-247 IXFH26N60P

View all MOSFETs
Save 5% when you buy 15 units

Subtotal 6 units (supplied in a tube)*

£44.82

(exc. VAT)

£53.76

(inc. VAT)

Add to Basket
Select or type quantity
In Stock
  • 32 unit(s) ready to ship
  • Plus 30 unit(s) shipping from 07 October 2025
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units
Per unit
6 - 14£7.47
15 +£7.09

*price indicative

Packaging Options:
RS Stock No.:
194-451P
Mfr. Part No.:
IXFH26N60P
Brand:
IXYS
Find similar products by selecting one or more attributes.
Select all

Brand

IXYS

Channel Type

N

Maximum Continuous Drain Current

26 A

Maximum Drain Source Voltage

600 V

Package Type

TO-247

Series

HiperFET, Polar

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

270 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

5V

Maximum Power Dissipation

460 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-30 V, +30 V

Number of Elements per Chip

1

Length

16.26mm

Maximum Operating Temperature

+150 °C

Typical Gate Charge @ Vgs

72 nC @ 10 V

Transistor Material

Si

Width

5.3mm

Height

21.46mm

Minimum Operating Temperature

-55 °C

N-channel Power MOSFET, IXYS HiperFET™ Polar™ Series


N-Channel Power MOSFETs with Fast Intrinsic Diode (HiPerFET™) from IXYS


MOSFET Transistors, IXYS


A wide range of advanced discrete Power MOSFET devices from IXYS