IXYS HiperFET, Polar N-Channel MOSFET, 115 A, 300 V, 4-Pin SOT-227 IXFN140N30P

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Subtotal 2 units (supplied in a tube)*

£53.94

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£64.72

(inc. VAT)

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2 - 4£26.97
5 +£26.14

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Packaging Options:
RS Stock No.:
193-739P
Mfr. Part No.:
IXFN140N30P
Brand:
IXYS
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Brand

IXYS

Channel Type

N

Maximum Continuous Drain Current

115 A

Maximum Drain Source Voltage

300 V

Package Type

SOT-227

Series

HiperFET, Polar

Mounting Type

Screw Mount

Pin Count

4

Maximum Drain Source Resistance

24 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

5V

Maximum Power Dissipation

700 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Length

38.2mm

Number of Elements per Chip

1

Transistor Material

Si

Maximum Operating Temperature

+150 °C

Typical Gate Charge @ Vgs

185 nC @ 10 V

Width

25.07mm

Minimum Operating Temperature

-55 °C

Height

9.6mm

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