Infineon SIPMOS® P-Channel MOSFET, 1.9 A, 60 V, 3-Pin SOT-223 BSP171PH6327XTSA1
- RS Stock No.:
- 167-942P
- Mfr. Part No.:
- BSP171PH6327XTSA1
- Brand:
- Infineon
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Units | Per unit |
|---|---|
| 100 - 240 | £0.499 |
| 250 - 490 | £0.489 |
| 500 - 990 | £0.458 |
| 1000 + | £0.426 |
*price indicative
- RS Stock No.:
- 167-942P
- Mfr. Part No.:
- BSP171PH6327XTSA1
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | P | |
| Maximum Continuous Drain Current | 1.9 A | |
| Maximum Drain Source Voltage | 60 V | |
| Package Type | SOT-223 | |
| Series | SIPMOS® | |
| Mounting Type | Surface Mount | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 300 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 2V | |
| Minimum Gate Threshold Voltage | 1V | |
| Maximum Power Dissipation | 1.8 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | -20 V, +20 V | |
| Transistor Material | Si | |
| Width | 3.5mm | |
| Maximum Operating Temperature | +150 °C | |
| Number of Elements per Chip | 1 | |
| Length | 6.5mm | |
| Typical Gate Charge @ Vgs | 13 nC @ 10 V | |
| Minimum Operating Temperature | -55 °C | |
| Height | 1.6mm | |
| Automotive Standard | AEC-Q101 | |
| Forward Diode Voltage | 1.1V | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type P | ||
Maximum Continuous Drain Current 1.9 A | ||
Maximum Drain Source Voltage 60 V | ||
Package Type SOT-223 | ||
Series SIPMOS® | ||
Mounting Type Surface Mount | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 300 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 2V | ||
Minimum Gate Threshold Voltage 1V | ||
Maximum Power Dissipation 1.8 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -20 V, +20 V | ||
Transistor Material Si | ||
Width 3.5mm | ||
Maximum Operating Temperature +150 °C | ||
Number of Elements per Chip 1 | ||
Length 6.5mm | ||
Typical Gate Charge @ Vgs 13 nC @ 10 V | ||
Minimum Operating Temperature -55 °C | ||
Height 1.6mm | ||
Automotive Standard AEC-Q101 | ||
Forward Diode Voltage 1.1V | ||
Infineon SIPMOS® P-Channel MOSFETs
The Infineon SIPMOS® small Signal P- channel MOSFETs have several features which may include enhancement mode, continuous drain current some as low as -80A plus a wide operating temperature range. The SIPMOS Power transistor can be used in a variety of applications including Telecom, eMobility, Notebooks, DC/DC devices as well as the automotive industry.
· AEC Q101 Qualified (Please refer to datasheet)
· Pb-free lead plating, RoHS compliant
· Pb-free lead plating, RoHS compliant
Infineon SIPMOS® Series MOSFET, 1.9A Maximum Continuous Drain Current, 1.8W Maximum Power Dissipation - BSP171PH6327XTSA1
This MOSFET is designed for high-performance switching applications, utilising P-channel technology. With SIPMOS® technology, it ensures dependable operation in a compact SOT-223 package, making it a suitable option for automotive and industrial applications. The continuous drain current rating of 1.9A and a maximum voltage of 60V enhance its effectiveness in efficiently managing power across various uses.
Features & Benefits
• P-channel configuration supports low side switching applications
• Enhancement mode operation promotes efficient performance
• Surface mount design conserves valuable PCB space
• Rated for high temperatures up to +150°C, ensuring durability
• Low Rds(on) diminishes power loss during switching
• Enhancement mode operation promotes efficient performance
• Surface mount design conserves valuable PCB space
• Rated for high temperatures up to +150°C, ensuring durability
• Low Rds(on) diminishes power loss during switching
Applications
• Load switching in automotive electronics
• Power management circuits for energy efficiency
• High-frequency requiring rapid switching
• Driving loads in consumer electronic devices
• Power supply circuits necessitating compact solutions
• Power management circuits for energy efficiency
• High-frequency requiring rapid switching
• Driving loads in consumer electronic devices
• Power supply circuits necessitating compact solutions
What is the maximum drain-source voltage this component can handle?
The component can withstand a maximum drain-source voltage of 60V, making it suitable for various applications.
How does this component perform at elevated temperatures?
It operates effectively at temperatures up to +150°C, providing performance in demanding environments.
Can it be used in battery-operated circuits?
Yes, its low Rds(on) significantly reduces power loss, making it well-suited for battery-operated devices.
What is the significance of the avalanche rating?
The avalanche rating indicates that the device can absorb energy spikes, enhancing its durability and reliability during transients.
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
