STMicroelectronics HB Series Dual P-Channel MOSFET, 83 A, 650 V Depletion, 9-Pin ACEPACK SMIT STGSH80HB65DAG

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Subtotal 10 units (supplied on a continuous strip)*

£258.00

(exc. VAT)

£309.60

(inc. VAT)

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  • Shipping from 30 January 2026
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Units
Per unit
10 - 99£25.80
100 +£23.79

*price indicative

Packaging Options:
RS Stock No.:
152-183P
Mfr. Part No.:
STGSH80HB65DAG
Brand:
STMicroelectronics
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Brand

STMicroelectronics

Channel Type

P

Maximum Continuous Drain Current

83 A

Maximum Drain Source Voltage

650 V

Package Type

ACEPACK SMIT

Series

HB Series

Mounting Type

Surface Mount

Pin Count

9

Channel Mode

Depletion

Number of Elements per Chip

2

COO (Country of Origin):
CN
The STMicroelectronics device combines two IGBTs and diodes in half-bridge topology mounted on a very compact and rugged easily surface-mounted package. The device is part of the HB series IGBTs, which is optimized both in conduction and switching losses for soft commutation. A freewheeling diode with a low drop forward voltage is included in every switch.

AQG 324 qualified
High-speed switching series
Minimized tail current
Tight parameter distribution
Low thermal resistance thanks to DBC substrate