STMicroelectronics MDmesh K5 N-Channel MOSFET, 6 A, 1200 V, 3-Pin TO-247 STW8N120K5
- RS Stock No.:
- 151-923
- Mfr. Part No.:
- STW8N120K5
- Brand:
- STMicroelectronics
Subtotal (1 unit)*
£6.91
(exc. VAT)
£8.29
(inc. VAT)
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In Stock
- 594 unit(s) ready to ship
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Units | Per unit |
|---|---|
| 1 + | £6.91 |
*price indicative
- RS Stock No.:
- 151-923
- Mfr. Part No.:
- STW8N120K5
- Brand:
- STMicroelectronics
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | STMicroelectronics | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 6 A | |
| Maximum Drain Source Voltage | 1200 V | |
| Package Type | TO-247 | |
| Series | MDmesh K5 | |
| Mounting Type | Through Hole | |
| Pin Count | 3 | |
| Channel Mode | Enhancement | |
| Number of Elements per Chip | 1 | |
Select all | ||
|---|---|---|
Brand STMicroelectronics | ||
Channel Type N | ||
Maximum Continuous Drain Current 6 A | ||
Maximum Drain Source Voltage 1200 V | ||
Package Type TO-247 | ||
Series MDmesh K5 | ||
Mounting Type Through Hole | ||
Pin Count 3 | ||
Channel Mode Enhancement | ||
Number of Elements per Chip 1 | ||
- COO (Country of Origin):
- CN
The STMicroelectronics Power MOSFET is designed using MDmesh K5 technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in on resistance and ultra low gate charge for applications requiring superior power density and high efficiency.
Industry’s lowest RDS(on) x area
Industry’s best FoM
Ultra low gate charge
100% avalanche tested
Zener protected
Industry’s best FoM
Ultra low gate charge
100% avalanche tested
Zener protected