STMicroelectronics SuperMESH3 N-Channel MOSFET, 1.8 A, 400 V, 4-Pin SOT-223 STN3N40K3
- RS Stock No.:
- 151-445
- Mfr. Part No.:
- STN3N40K3
- Brand:
- STMicroelectronics
Bulk discount available
Subtotal (1 tape of 20 units)*
£5.48
(exc. VAT)
£6.58
(inc. VAT)
FREE delivery for orders over £50.00
In Stock
- 3,760 unit(s) ready to ship
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Tape* |
---|---|---|
20 - 180 | £0.274 | £5.48 |
200 - 480 | £0.26 | £5.20 |
500 - 980 | £0.241 | £4.82 |
1000 - 1980 | £0.222 | £4.44 |
2000 + | £0.213 | £4.26 |
*price indicative
- RS Stock No.:
- 151-445
- Mfr. Part No.:
- STN3N40K3
- Brand:
- STMicroelectronics
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
---|---|---|
Brand | STMicroelectronics | |
Channel Type | N | |
Maximum Continuous Drain Current | 1.8 A | |
Maximum Drain Source Voltage | 400 V | |
Package Type | SOT-223 | |
Series | SuperMESH3 | |
Mounting Type | Surface Mount | |
Pin Count | 4 | |
Channel Mode | Enhancement | |
Number of Elements per Chip | 1 | |
Select all | ||
---|---|---|
Brand STMicroelectronics | ||
Channel Type N | ||
Maximum Continuous Drain Current 1.8 A | ||
Maximum Drain Source Voltage 400 V | ||
Package Type SOT-223 | ||
Series SuperMESH3 | ||
Mounting Type Surface Mount | ||
Pin Count 4 | ||
Channel Mode Enhancement | ||
Number of Elements per Chip 1 | ||
- COO (Country of Origin):
- CN
The STMicroelectronics Power MOSFET is the result of improvements applied to Super MESH technology, combined with a new optimized vertical structure. This device boasts an extremely low on resistance, superior dynamic performance and high avalanche capability, rendering it suitable for the most demanding applications.
Extremely high dv/dt capability
Gate charge minimized
Very low intrinsic capacitance
Improved diode reverse recovery characteristics
Zener protected
Gate charge minimized
Very low intrinsic capacitance
Improved diode reverse recovery characteristics
Zener protected