onsemi N-Channel MOSFET, 500 mA, 60 V, 3-Pin TO-92 BS170
- RS Stock No.:
- 671-4736
- Mfr. Part No.:
- BS170
- Brand:
- onsemi
Bulk discount available
Subtotal (1 pack of 10 units)*
£2.48
(exc. VAT)
£2.98
(inc. VAT)
FREE delivery for orders over £50.00
In Stock
- 3,060 unit(s) ready to ship
- Plus 2,590 unit(s) ready to ship from another location
- Plus 4,870 unit(s) shipping from 09 October 2025
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Units | Per unit | Per Pack* |
|---|---|---|
| 10 - 90 | £0.248 | £2.48 |
| 100 - 240 | £0.214 | £2.14 |
| 250 - 490 | £0.185 | £1.85 |
| 500 + | £0.163 | £1.63 |
*price indicative
Alternative
This product is not currently available. Here is our alternative recommendation.
Each (In a Bag of 1000)
£0.102
(exc. VAT)
£0.122
(inc. VAT)
- RS Stock No.:
- 671-4736
- Mfr. Part No.:
- BS170
- Brand:
- onsemi
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | onsemi | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 500 mA | |
| Maximum Drain Source Voltage | 60 V | |
| Package Type | TO-92 | |
| Mounting Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 5 Ω | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 3V | |
| Minimum Gate Threshold Voltage | 0.8V | |
| Maximum Power Dissipation | 830 mW | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | -20 V, +20 V | |
| Maximum Operating Temperature | +150 °C | |
| Length | 5.2mm | |
| Transistor Material | Si | |
| Number of Elements per Chip | 1 | |
| Width | 4.19mm | |
| Minimum Operating Temperature | -55 °C | |
| Height | 5.33mm | |
Select all | ||
|---|---|---|
Brand onsemi | ||
Channel Type N | ||
Maximum Continuous Drain Current 500 mA | ||
Maximum Drain Source Voltage 60 V | ||
Package Type TO-92 | ||
Mounting Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 5 Ω | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 3V | ||
Minimum Gate Threshold Voltage 0.8V | ||
Maximum Power Dissipation 830 mW | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -20 V, +20 V | ||
Maximum Operating Temperature +150 °C | ||
Length 5.2mm | ||
Transistor Material Si | ||
Number of Elements per Chip 1 | ||
Width 4.19mm | ||
Minimum Operating Temperature -55 °C | ||
Height 5.33mm | ||
Enhancement Mode N-Channel MOSFET, Fairchild Semiconductor
Enhancement Mode Field Effect Transistors (FET) are produced using Fairchild’s proprietary, high cell density, DMOS technology. This high density process has been designed to minimise on-state resistance, provide rugged and reliable performance and fast switching.
MOSFET Transistors, ON Semi
ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.
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