Toshiba 2SK208-R(TE85L,F) N-Channel JFET, 10 V, Idss 0.3 to 0.75mA, 3-Pin SOT-346 (SC-59)
- RS Stock No.:
- 760-3123P
- Mfr. Part No.:
- 2SK208-R(TE85L,F)
- Brand:
- Toshiba
Bulk discount available
Subtotal 100 units (supplied on a continuous strip)*
£17.40
(exc. VAT)
£20.90
(inc. VAT)
FREE delivery for orders over £50.00
In Stock
- 3,030 unit(s) ready to ship
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit |
|---|---|
| 100 - 190 | £0.174 |
| 200 - 390 | £0.158 |
| 400 + | £0.155 |
*price indicative
- RS Stock No.:
- 760-3123P
- Mfr. Part No.:
- 2SK208-R(TE85L,F)
- Brand:
- Toshiba
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Toshiba | |
| Channel Type | N | |
| Idss Drain-Source Cut-off Current | 0.3 to 0.75mA | |
| Maximum Drain Source Voltage | 10 V | |
| Maximum Gate Source Voltage | -30 V | |
| Maximum Drain Gate Voltage | -50V | |
| Configuration | Single | |
| Transistor Configuration | Single | |
| Mounting Type | Surface Mount | |
| Package Type | SOT-346 (SC-59) | |
| Pin Count | 3 | |
| Dimensions | 2.9 x 1.5 x 1.1mm | |
| Length | 2.9mm | |
| Maximum Operating Temperature | +125 °C | |
| Minimum Operating Temperature | -55 °C | |
| Height | 1.1mm | |
| Width | 1.5mm | |
| Select all | ||
|---|---|---|
Brand Toshiba | ||
Channel Type N | ||
Idss Drain-Source Cut-off Current 0.3 to 0.75mA | ||
Maximum Drain Source Voltage 10 V | ||
Maximum Gate Source Voltage -30 V | ||
Maximum Drain Gate Voltage -50V | ||
Configuration Single | ||
Transistor Configuration Single | ||
Mounting Type Surface Mount | ||
Package Type SOT-346 (SC-59) | ||
Pin Count 3 | ||
Dimensions 2.9 x 1.5 x 1.1mm | ||
Length 2.9mm | ||
Maximum Operating Temperature +125 °C | ||
Minimum Operating Temperature -55 °C | ||
Height 1.1mm | ||
Width 1.5mm | ||
N-channel JFET, Toshiba
JFET Transistors
A range of JFET (junction field-effect transistor) and HEMT/HFET (high-electron-mobility transistor/ hetero-junction FET) discrete semiconductor devices.
Related links
- Toshiba 2SK208-R(TE85L 10 V 3-Pin SOT-346 (SC-59)
- Toshiba 2SK209-Y(TE85L 10 V 3-Pin SOT-346 (SC-59)
- Toshiba DiodeF)
- Toshiba Switching DiodeF)
- Toshiba Dual Switching Diode 3-Pin SOT-346 (SC-59) 1SS226(TE85L,F)
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- Toshiba Dual Switching Diode 3-Pin SOT-346 (SC-59) 1SS379(F)
- Toshiba Dual Switching Diode 3-Pin SOT-346 (SC-59) 1SS398(F)
