onsemi, Single Type N-Channel JFET-Channel JFET, 25 V 24 to 60 mA, 3-Pin SOT-23
- RS Stock No.:
- 122-0136
- Mfr. Part No.:
- MMBFJ310LT3G
- Brand:
- onsemi
Subtotal (1 reel of 10000 units)*
£670.00
(exc. VAT)
£800.00
(inc. VAT)
FREE delivery for orders over £50.00
Temporarily out of stock
- Shipping from 15 July 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Reel* |
|---|---|---|
| 10000 + | £0.067 | £670.00 |
*price indicative
- RS Stock No.:
- 122-0136
- Mfr. Part No.:
- MMBFJ310LT3G
- Brand:
- onsemi
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | onsemi | |
| Channel Type | Type N | |
| Product Type | JFET | |
| Sub Type | JFET | |
| Maximum Drain Source Voltage Vds | 25V | |
| Configuration | Single | |
| Mount Type | Surface | |
| Package Type | SOT-23 | |
| Pin Count | 3 | |
| Minimum Operating Temperature | -55°C | |
| Drain Source Current Ids | 24 to 60 mA | |
| Maximum Power Dissipation Pd | 225mW | |
| Maximum Gate Source Voltage Vgs | 25 V | |
| Maximum Operating Temperature | 150°C | |
| Length | 3.04mm | |
| Width | 1.4 mm | |
| Height | 1.01mm | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand onsemi | ||
Channel Type Type N | ||
Product Type JFET | ||
Sub Type JFET | ||
Maximum Drain Source Voltage Vds 25V | ||
Configuration Single | ||
Mount Type Surface | ||
Package Type SOT-23 | ||
Pin Count 3 | ||
Minimum Operating Temperature -55°C | ||
Drain Source Current Ids 24 to 60 mA | ||
Maximum Power Dissipation Pd 225mW | ||
Maximum Gate Source Voltage Vgs 25 V | ||
Maximum Operating Temperature 150°C | ||
Length 3.04mm | ||
Width 1.4 mm | ||
Height 1.01mm | ||
Standards/Approvals No | ||
Automotive Standard No | ||
RoHS Status: Exempt
- COO (Country of Origin):
- CN
N-channel JFET, ON Semiconductor
JFET Transistors
A range of JFET (junction field-effect transistor) and HEMT/HFET (high-electron-mobility transistor/ hetero-junction FET) discrete semiconductor devices.
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