Infineon IRG8P50N120KD-EPBF IGBT, 80 A 1200 V, 3-Pin TO-247AD, Through Hole
- RS Stock No.:
- 907-4858
- Mfr. Part No.:
- IRG8P50N120KD-EPBF
- Brand:
- Infineon
Unavailable
RS will no longer stock this product.
- RS Stock No.:
- 907-4858
- Mfr. Part No.:
- IRG8P50N120KD-EPBF
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Maximum Continuous Collector Current | 80 A | |
| Maximum Collector Emitter Voltage | 1200 V | |
| Maximum Gate Emitter Voltage | ±30V | |
| Maximum Power Dissipation | 350 W | |
| Package Type | TO-247AD | |
| Mounting Type | Through Hole | |
| Channel Type | N | |
| Pin Count | 3 | |
| Switching Speed | 1MHz | |
| Transistor Configuration | Single | |
| Dimensions | 15.87 x 5.31 x 20.7mm | |
| Gate Capacitance | 3300pF | |
| Energy Rating | 7.7mJ | |
| Maximum Operating Temperature | +150 °C | |
| Minimum Operating Temperature | -40 °C | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Maximum Continuous Collector Current 80 A | ||
Maximum Collector Emitter Voltage 1200 V | ||
Maximum Gate Emitter Voltage ±30V | ||
Maximum Power Dissipation 350 W | ||
Package Type TO-247AD | ||
Mounting Type Through Hole | ||
Channel Type N | ||
Pin Count 3 | ||
Switching Speed 1MHz | ||
Transistor Configuration Single | ||
Dimensions 15.87 x 5.31 x 20.7mm | ||
Gate Capacitance 3300pF | ||
Energy Rating 7.7mJ | ||
Maximum Operating Temperature +150 °C | ||
Minimum Operating Temperature -40 °C | ||
- COO (Country of Origin):
- MX