onsemi NGTB50N60S1WG IGBT, 100 A 600 V, 3-Pin TO-247, Through Hole
- RS Stock No.:
- 882-9828
- Mfr. Part No.:
- NGTB50N60S1WG
- Brand:
- ON Semiconductor
Currently unavailable
We don’t know if this item will be back in stock, it is being discontinued by the manufacturer.
- RS Stock No.:
- 882-9828
- Mfr. Part No.:
- NGTB50N60S1WG
- Brand:
- ON Semiconductor
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | ON Semiconductor | |
| Maximum Continuous Collector Current | 100 A | |
| Maximum Collector Emitter Voltage | 600 V | |
| Maximum Gate Emitter Voltage | ±20V | |
| Maximum Power Dissipation | 208 W | |
| Package Type | TO-247 | |
| Mounting Type | Through Hole | |
| Channel Type | N | |
| Pin Count | 3 | |
| Switching Speed | 1MHz | |
| Transistor Configuration | Single | |
| Dimensions | 16.25 x 5.3 x 21.4mm | |
| Maximum Operating Temperature | +175 °C | |
| Gate Capacitance | 5328pF | |
| Minimum Operating Temperature | -55 °C | |
Select all | ||
|---|---|---|
Brand ON Semiconductor | ||
Maximum Continuous Collector Current 100 A | ||
Maximum Collector Emitter Voltage 600 V | ||
Maximum Gate Emitter Voltage ±20V | ||
Maximum Power Dissipation 208 W | ||
Package Type TO-247 | ||
Mounting Type Through Hole | ||
Channel Type N | ||
Pin Count 3 | ||
Switching Speed 1MHz | ||
Transistor Configuration Single | ||
Dimensions 16.25 x 5.3 x 21.4mm | ||
Maximum Operating Temperature +175 °C | ||
Gate Capacitance 5328pF | ||
Minimum Operating Temperature -55 °C | ||
- COO (Country of Origin):
- CN
IGBT Discretes, ON Semiconductor
Insulated Gate Bipolar Transistors (IGBT) for motor drive and other high current switching applications.
IGBT Discretes, ON Semiconductor
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.