onsemi NGTB03N60R2DT4G IGBT, 9 A 600 V, 3-Pin DPAK (TO-252), Surface Mount
- RS Stock No.:
- 882-9795
- Mfr. Part No.:
- NGTB03N60R2DT4G
- Brand:
- ON Semiconductor
Unavailable
RS will no longer stock this product.
- RS Stock No.:
- 882-9795
- Mfr. Part No.:
- NGTB03N60R2DT4G
- Brand:
- ON Semiconductor
Specifications
Technical Reference
Legislation and Compliance
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | ON Semiconductor | |
| Maximum Continuous Collector Current | 9 A | |
| Maximum Collector Emitter Voltage | 600 V | |
| Maximum Gate Emitter Voltage | ±20V | |
| Maximum Power Dissipation | 49 W | |
| Package Type | DPAK (TO-252) | |
| Mounting Type | Surface Mount | |
| Channel Type | N | |
| Pin Count | 3 | |
| Switching Speed | 1MHz | |
| Transistor Configuration | Single | |
| Dimensions | 6.73 x 6.22 x 2.38mm | |
| Maximum Operating Temperature | +175 °C | |
| Gate Capacitance | 415pF | |
| Select all | ||
|---|---|---|
Brand ON Semiconductor | ||
Maximum Continuous Collector Current 9 A | ||
Maximum Collector Emitter Voltage 600 V | ||
Maximum Gate Emitter Voltage ±20V | ||
Maximum Power Dissipation 49 W | ||
Package Type DPAK (TO-252) | ||
Mounting Type Surface Mount | ||
Channel Type N | ||
Pin Count 3 | ||
Switching Speed 1MHz | ||
Transistor Configuration Single | ||
Dimensions 6.73 x 6.22 x 2.38mm | ||
Maximum Operating Temperature +175 °C | ||
Gate Capacitance 415pF | ||
- COO (Country of Origin):
- CN