Infineon IRGS4615DPBF IGBT, 23 A 600 V, 3-Pin D2PAK (TO-263), Surface Mount

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We don’t know if this item will be back in stock, it is being discontinued by the manufacturer.
Packaging Options:
RS Stock No.:
879-3491
Mfr. Part No.:
IRGS4615DPBF
Brand:
Infineon
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Brand

Infineon

Maximum Continuous Collector Current

23 A

Maximum Collector Emitter Voltage

600 V

Maximum Gate Emitter Voltage

±20V

Maximum Power Dissipation

99 W

Package Type

D2PAK (TO-263)

Mounting Type

Surface Mount

Channel Type

N

Pin Count

3

Switching Speed

8 → 30kHz

Transistor Configuration

Single

Dimensions

10.67 x 9.65 x 4.83mm

Energy Rating

165µJ

Minimum Operating Temperature

-40 °C

Maximum Operating Temperature

+175 °C

COO (Country of Origin):
MX

Single IGBT up to 20A, Infineon


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International Rectifier offers an extensive IGBT (Insulated-Gate Bipolar Transistor) portfolio ranging from 300V to 1200V based on various technologies that minimize switching and conduction losses to increase efficiency, reduce thermal problems and improve power density. The company also offers a broad range of IGBT dies designed specifically for medium- to high-power modules. For modules that demand the highest reliability, solderable front metal (SFM) dies can be employed to eliminate bond wires and allow double-sided cooling for improved thermal performance, reliability and efficiency.