STMicroelectronics STGW35HF60WD IGBT, 60 A 600 V, 3-Pin TO-247, Through Hole
- RS Stock No.:
- 877-2908
- Mfr. Part No.:
- STGW35HF60WD
- Brand:
- STMicroelectronics
Currently unavailable
We don’t know if this item will be back in stock, it is being discontinued by the manufacturer.
Alternative
This product is not currently available. Here is our alternative recommendation.
Each
£5.06
(exc. VAT)
£6.07
(inc. VAT)
- RS Stock No.:
- 877-2908
- Mfr. Part No.:
- STGW35HF60WD
- Brand:
- STMicroelectronics
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | STMicroelectronics | |
| Maximum Continuous Collector Current | 60 A | |
| Maximum Collector Emitter Voltage | 600 V | |
| Maximum Gate Emitter Voltage | ±20V | |
| Maximum Power Dissipation | 200 W | |
| Package Type | TO-247 | |
| Mounting Type | Through Hole | |
| Channel Type | N | |
| Pin Count | 3 | |
| Transistor Configuration | Single | |
| Dimensions | 15.75 x 5.15 x 24.45mm | |
| Gate Capacitance | 2400pF | |
| Energy Rating | 770mJ | |
| Maximum Operating Temperature | +150 °C | |
| Minimum Operating Temperature | -55 °C | |
Select all | ||
|---|---|---|
Brand STMicroelectronics | ||
Maximum Continuous Collector Current 60 A | ||
Maximum Collector Emitter Voltage 600 V | ||
Maximum Gate Emitter Voltage ±20V | ||
Maximum Power Dissipation 200 W | ||
Package Type TO-247 | ||
Mounting Type Through Hole | ||
Channel Type N | ||
Pin Count 3 | ||
Transistor Configuration Single | ||
Dimensions 15.75 x 5.15 x 24.45mm | ||
Gate Capacitance 2400pF | ||
Energy Rating 770mJ | ||
Maximum Operating Temperature +150 °C | ||
Minimum Operating Temperature -55 °C | ||
- COO (Country of Origin):
- CN
IGBT Discretes, STMicroelectronics
IGBT Discretes & Modules, STMicroelectronics
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.