onsemi ISL9V3040D3ST IGBT, 21 A 300 V, 3-Pin DPAK (TO-252), Surface Mount

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Subtotal (1 pack of 5 units)*

£11.69

(exc. VAT)

£14.03

(inc. VAT)

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  • 45 unit(s) ready to ship
  • Plus 1,735 unit(s) shipping from 20 November 2025
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5 - 45£2.338£11.69
50 - 95£2.016£10.08
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500 - 995£1.536£7.68
1000 +£1.398£6.99

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Packaging Options:
RS Stock No.:
807-8758
Mfr. Part No.:
ISL9V3040D3ST
Brand:
onsemi
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Brand

onsemi

Maximum Continuous Collector Current

21 A

Maximum Collector Emitter Voltage

300 V

Maximum Gate Emitter Voltage

±10V

Maximum Power Dissipation

150 W

Package Type

DPAK (TO-252)

Mounting Type

Surface Mount

Channel Type

N

Pin Count

3

Switching Speed

1MHz

Transistor Configuration

Single

Dimensions

6.73 x 6.22 x 2.39mm

Minimum Operating Temperature

-40 °C

Maximum Operating Temperature

+175 °C

Discrete IGBTs, Fairchild Semiconductor



IGBT Discretes & Modules, Fairchild Semiconductor


The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.

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