Fairchild FGA50N100BNTD2 IGBT, 50 A 1000 V, 3-Pin TO-3P, Through Hole
- RS Stock No.:
- 807-0757
- Mfr. Part No.:
- FGA50N100BNTD2
- Brand:
- Fairchild Semiconductor
Discontinued
- RS Stock No.:
- 807-0757
- Mfr. Part No.:
- FGA50N100BNTD2
- Brand:
- Fairchild Semiconductor
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Fairchild Semiconductor | |
| Maximum Continuous Collector Current | 50 A | |
| Maximum Collector Emitter Voltage | 1000 V | |
| Maximum Gate Emitter Voltage | ±25V | |
| Maximum Power Dissipation | 156 W | |
| Package Type | TO-3P | |
| Mounting Type | Through Hole | |
| Channel Type | N | |
| Pin Count | 3 | |
| Switching Speed | 1MHz | |
| Transistor Configuration | Single | |
| Dimensions | 15.8 x 5 x 20.1mm | |
| Maximum Operating Temperature | +150 °C | |
| Minimum Operating Temperature | -55 °C | |
| Select all | ||
|---|---|---|
Brand Fairchild Semiconductor | ||
Maximum Continuous Collector Current 50 A | ||
Maximum Collector Emitter Voltage 1000 V | ||
Maximum Gate Emitter Voltage ±25V | ||
Maximum Power Dissipation 156 W | ||
Package Type TO-3P | ||
Mounting Type Through Hole | ||
Channel Type N | ||
Pin Count 3 | ||
Switching Speed 1MHz | ||
Transistor Configuration Single | ||
Dimensions 15.8 x 5 x 20.1mm | ||
Maximum Operating Temperature +150 °C | ||
Minimum Operating Temperature -55 °C | ||
Discrete IGBTs, 1000V and over, Fairchild Semiconductor
IGBT Discretes & Modules, Fairchild Semiconductor
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.