onsemi NGTG12N60TF1G IGBT, 88 (Pulse) A 600 V, 3-Pin TO-3PF, Through Hole
- RS Stock No.:
- 801-6801
- Mfr. Part No.:
- NGTG12N60TF1G
- Brand:
- ON Semiconductor
Subtotal (1 pack of 5 units)*
£2.88
(exc. VAT)
£3.455
(inc. VAT)
Stock information currently inaccessible
Units | Per unit | Per Pack* |
|---|---|---|
| 5 + | £0.576 | £2.88 |
*price indicative
- RS Stock No.:
- 801-6801
- Mfr. Part No.:
- NGTG12N60TF1G
- Brand:
- ON Semiconductor
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | ON Semiconductor | |
| Maximum Continuous Collector Current | 88 (Pulse) A | |
| Maximum Collector Emitter Voltage | 600 V | |
| Maximum Gate Emitter Voltage | ±20V | |
| Maximum Power Dissipation | 54 W | |
| Package Type | TO-3PF | |
| Mounting Type | Through Hole | |
| Channel Type | N | |
| Pin Count | 3 | |
| Transistor Configuration | Single | |
| Dimensions | 15.5 x 5.5 x 26.5mm | |
| Maximum Operating Temperature | +150 °C | |
Select all | ||
|---|---|---|
Brand ON Semiconductor | ||
Maximum Continuous Collector Current 88 (Pulse) A | ||
Maximum Collector Emitter Voltage 600 V | ||
Maximum Gate Emitter Voltage ±20V | ||
Maximum Power Dissipation 54 W | ||
Package Type TO-3PF | ||
Mounting Type Through Hole | ||
Channel Type N | ||
Pin Count 3 | ||
Transistor Configuration Single | ||
Dimensions 15.5 x 5.5 x 26.5mm | ||
Maximum Operating Temperature +150 °C | ||
IGBT Discretes, ON Semiconductor
Insulated Gate Bipolar Transistors (IGBT) for motor drive and other high current switching applications.
IGBT Discretes, ON Semiconductor
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
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