onsemi NGTG12N60TF1G IGBT, 88 (Pulse) A 600 V, 3-Pin TO-3PF, Through Hole

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Subtotal (1 pack of 5 units)*

£2.88

(exc. VAT)

£3.455

(inc. VAT)

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5 +£0.576£2.88

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Packaging Options:
RS Stock No.:
801-6801
Mfr. Part No.:
NGTG12N60TF1G
Brand:
ON Semiconductor
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Brand

ON Semiconductor

Maximum Continuous Collector Current

88 (Pulse) A

Maximum Collector Emitter Voltage

600 V

Maximum Gate Emitter Voltage

±20V

Maximum Power Dissipation

54 W

Package Type

TO-3PF

Mounting Type

Through Hole

Channel Type

N

Pin Count

3

Transistor Configuration

Single

Dimensions

15.5 x 5.5 x 26.5mm

Maximum Operating Temperature

+150 °C

IGBT Discretes, ON Semiconductor


Insulated Gate Bipolar Transistors (IGBT) for motor drive and other high current switching applications.


IGBT Discretes, ON Semiconductor


The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.

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