- RS Stock No.:
- 796-5046
- Mfr. Part No.:
- GT15J341
- Brand:
- Toshiba
30 In stock - FREE next working day delivery available
10 available from Europe for delivery within 1 working day(s).
Added
Price Each (In a Pack of 5)
£1.632
(exc. VAT)
£1.958
(inc. VAT)
Units | Per unit | Per Pack* |
5 - 20 | £1.632 | £8.16 |
25 - 245 | £1.39 | £6.95 |
250 - 395 | £1.226 | £6.13 |
400 - 795 | £1.062 | £5.31 |
800 + | £0.92 | £4.60 |
*price indicative |
- RS Stock No.:
- 796-5046
- Mfr. Part No.:
- GT15J341
- Brand:
- Toshiba
Technical Reference
Legislation and Compliance
Product Details
IGBT Discretes, Toshiba
IGBT Discretes & Modules, Toshiba
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
Specifications
Attribute | Value |
---|---|
Maximum Continuous Collector Current | 15 A |
Maximum Collector Emitter Voltage | 600 V |
Maximum Gate Emitter Voltage | ±25V |
Maximum Power Dissipation | 30 W |
Package Type | TO-220SIS |
Mounting Type | Through Hole |
Channel Type | N |
Pin Count | 3 |
Switching Speed | 100kHz |
Transistor Configuration | Single |
Dimensions | 10 x 4.5 x 15mm |
Maximum Operating Temperature | +150 °C |
- RS Stock No.:
- 796-5046
- Mfr. Part No.:
- GT15J341
- Brand:
- Toshiba
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