STMicroelectronics STGP30H65F IGBT, 60 A 600 V, 3-Pin TO-220, Through Hole

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We don’t know if this item will be back in stock, it is being discontinued by the manufacturer.
Packaging Options:
RS Stock No.:
792-5789
Mfr. Part No.:
STGP30H65F
Brand:
STMicroelectronics
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Brand

STMicroelectronics

Maximum Continuous Collector Current

60 A

Maximum Collector Emitter Voltage

600 V

Maximum Gate Emitter Voltage

±20V

Maximum Power Dissipation

260 W

Package Type

TO-220

Mounting Type

Through Hole

Pin Count

3

Switching Speed

1MHz

Transistor Configuration

Single

Dimensions

15.75 x 5.15 x 20.15mm

Maximum Operating Temperature

+175 °C

Minimum Operating Temperature

-40 °C

IGBT Discretes, STMicroelectronics



IGBT Discretes & Modules, STMicroelectronics


The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.