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Infineon IKW75N60TFKSA1 Single IGBT, 80 A 600 V, 3-Pin TO-247, Through Hole

RS Stock No.:: 754-5402
Mfr. Part No.:: IKW75N60TFKSA1
Brand:: Infineon

Infineon IKW75N60TFKSA1 Single IGBT, 80 A 600 V, 3-Pin TO-247, Through Hole

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Subtotal (1 unit)*

£6.67

(exc. VAT)

£8.00

(inc. VAT)

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In Stock

15 unit(s) ready to ship
Plus 13 unit(s) ready to ship from another location
Plus 104 unit(s) shipping from 08 September 2025

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Units	Per unit
1 - 4	£6.67
5 - 9	£6.40
10 - 14	£6.19
15 - 19	£6.00
20 +	£5.89

*price indicative

RS Stock No.:: 754-5402
Mfr. Part No.:: IKW75N60TFKSA1
Brand:: Infineon

Infineon IGBT, 80A Maximum Continuous Collector Current, 600V Maximum Collector Emitter Voltage - IKW75N60TFKSA1

This IGBT is a high-performance semiconductor component designed for power electronics applications. With a maximum continuous collector current of 80A, it operates efficiently in high-voltage environments, rated for 600V. The device is packaged in a TO-247 format, ideal for through-hole mounting.

Features & Benefits

• Low collector-emitter saturation voltage enhances efficiency
• High switching speed reduces energy loss during operation
• Positive temperature coefficient ensures stable performance
• Compatible with a wide temperature range from -40°C to +175°C

Applications

• Suitable for use in frequency converters in industrial settings
• Ideal for uninterruptible power supply systems
• Utilised in motor control for automation
• Effective for renewable energy systems to ensure efficiency

What are the implications of short circuit withstand time for my application?

The short circuit withstand time of 5μs allows for reliable protection in applications that may encounter fault conditions, ensuring that the device can endure brief overcurrent situations without immediate failure.

How does the high switching speed impact system efficiency?

A high switching speed of 20kHz minimises energy losses during transitions, significantly improving overall system efficiency and performance, particularly in fast-response applications.

What are the thermal management considerations for optimal performance?

Thermal resistance values indicate effective heat dissipation from junction to case

managing junction temperatures within specified limits is crucial to maintain reliable operation and extend component lifespan.

IGBT Discretes & Modules, Infineon

The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	Infineon
	Maximum Continuous Collector Current	80 A
	Maximum Collector Emitter Voltage	600 V
	Maximum Gate Emitter Voltage	±20V
	Maximum Power Dissipation	428 W
	Number of Transistors	1
	Configuration	Single
	Package Type	TO-247
	Mounting Type	Through Hole
	Channel Type	N
	Pin Count	3
	Switching Speed	20kHz
	Transistor Configuration	Single
	Dimensions	16.03 x 21.1 x 5.16mm
	Minimum Operating Temperature	-40 °C
	Gate Capacitance	4620pF
	Maximum Operating Temperature	+175 °C

	Select all
	Brand Infineon
	Maximum Continuous Collector Current 80 A
	Maximum Collector Emitter Voltage 600 V
	Maximum Gate Emitter Voltage ±20V
	Maximum Power Dissipation 428 W
	Number of Transistors 1
	Configuration Single
	Package Type TO-247
	Mounting Type Through Hole
	Channel Type N
	Pin Count 3
	Switching Speed 20kHz
	Transistor Configuration Single
	Dimensions 16.03 x 21.1 x 5.16mm
	Minimum Operating Temperature -40 °C
	Gate Capacitance 4620pF
	Maximum Operating Temperature +175 °C

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